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2SA1627AG-X-TM3-T Folha de dados(PDF) 2 Page - Unisonic Technologies |
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2 / 4 page 2SA1627A PNP SILICON TRANSISTOR UNISONICTECHNOLOGIESCO.,LTD 2 of 4 www.unisonic.com.tw QW-R217-004.G ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage VCBO -600 V Collector-Emitter Voltage VCEO -600 V Emitter-Base Voltage VEBO -7.0 V Collector Power Dissipation SOT-223 PC 0.8 W TO-251/TO-252 1.9 TO-126/TO-126C 1.0 Collector Current (DC) IC -1.0 A Collector Current (Pulse) (Note 2) ICP -2.0 A Junction Temperature TJ 150 C Storage Temperature TSTG -55 ~ +150 C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. PW≦10ms, Duty Cycle≦50% ELECTRICAL CHARACTERISTICS (TA=25C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT Collector Cut-Off Current ICBO VCB= -600V, IE=0 -10 µA Emitter Cut-Off Current IEBO VEB= -7.0V, IC=0 -10 µA DC Current Gain (Note 2) hFE1 VCE= -5.0V, IC= -0.1A 30 58 120 hFE2 VCE= -5.0V, IC= -0.5A 4 19 Collector-Emitter Saturation Voltage(Note) VCE(SAT) IC= -0.3A, IB= -0.06A -0.28 -1.5 V Base-Emitter Saturation Voltage(Note) VBE(SAT) IC= -0.3A, IB= -0.06A -0.85 -1.2 V Gain Bandwidth Product fT VCE= -10V, IE=0.1A 10 28 MHz Output Capacitance COB VCB= -10V, IE=0, f=1.0MHz 42 50 pF Turn-On Time tON IC=-0.5A, RL=500Ω, IB1= -IB2= -0.1A, VCC =-250V 0.1 0.5 µs Storage Time TSYG 3.5 5.0 µs Fall Time tF 0.08 0.5 µs Note: Pulsed PW≦350µs, Duty Cycle≦2% CLASSIFICATION OF hFE1 RANK M L K RANGE 30-60 40-80 60-120 |
Nº de peça semelhante - 2SA1627AG-X-TM3-T |
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Descrição semelhante - 2SA1627AG-X-TM3-T |
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