TIP32C

PNP SILICON TRANSISTOR

UNISONICTECHNOLOGIESCO.,LTD

2 of 3

www.unisonic.com.tw

QW-R209-017,D

PARAMETER

SYMBOL

RATINGS

UNIT

Collector-Base Voltage

-100

V

Emitter-Base Voltage

-5

V

Collector Current

DC

-3

A

PULSE

-5

A

Base Current

-1

A

Power Dissipation

TO-220

2

W

TO-126S/TO-126

1.25

W

TO-252

1

W

Junction Temperature

+150

°C

Storage Temperature

-40 ~ +150

°C

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNIT

Collector Emitter Sustaining Voltage

(Note)

-100

V

Collector Cutoff Current

-200

μA

Collector Cutoff Current

-0.3

mA

Emitter Cutoff current

-1

mA

Collector-Emitter Saturation Voltage

(Note)

-1.2

V

Base-Emitter On Voltage*

-1.8

V

DC Current Gain (Note)

25

10

50

Current Gain Bandwidth Product

3

MHz

Note: Pulse Test: PW≤300μs, Duty Cyle≤2%