SI3442CDV datasheet(2/11 Pages) TFUNK

Nome de Peças	SI3442CDV

Descrição Electrónicos	N-Channel 20 V (D-S) MOSFET

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Document Number: 62654

S12-0976-Rev. A, 30-Apr-12

Vishay Siliconix

Si3442CDV

This datasheet is subject to change without notice.

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

For technical questions, contact: pmostechsupport@vishay.com

Notes:

a. Pulse test; pulse width

 300 µs, duty cycle  2 %

b. Guaranteed by design, not subject to production testing.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation

of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

Parameter

Symbol

Test Conditions

Min.

Typ.

Max.

Unit

Static

Drain-Source Breakdown Voltage

VDS

VGS = 0 V, ID = 250 µA

20

V

VDS Temperature Coefficient

V

DS/TJ

ID = 250 µA

15

mV/°C

VGS(th) Temperature Coefficient

V

GS(th)/TJ

- 2.8

Gate-Source Threshold Voltage

VGS(th)

VDS = VGS , ID = 250 µA

0.6

1.5

V

Gate-Source Leakage

IGSS

VDS = 0 V, VGS = ± 12 V

± 100

nA

Zero Gate Voltage Drain Current

IDSS

VDS = 20 V, VGS = 0 V

1

µA

VDS = 20 V, VGS = 0 V, TJ = 70 °C

10

On-State Drain Currenta

ID(on)

VDS 5 V, VGS = 10 V

20

A

Drain-Source On-State Resistancea

RDS(on)

VGS 10 V, ID = 6.5 A

0.0225

0.0270



VGS 4.5 V, ID = 5.9 A

0.0250

0.0300

VGS 2.5 V, ID = 2 A

0.0350

0.0490

Forward Transconductancea

gfs

VDS = 10 V, ID = 6.5 A

22

S

Dynamicb

Input Capacitance

Ciss

VDS = 10 V, VGS = 0 V, f = 1 MHz

335

pF

Output Capacitance

Coss

94

Reverse Transfer Capacitance

Crss

45

Total Gate Charge

Qg

VDS = 10 V, VGS = 10 V, ID = 5 A

9.2

14

nC

VDS = 10 V, VGS = 4.5 V, ID = 5 A

4.3

7

Gate-Source Charge

Qgs

1.1

Gate-Drain Charge

Qgd

0.9

Gate Resistance

Rg

f = 1 MHz

0.6

3

6



Turn-On Delay Time

td(on)

VDD = 10 V, RL = 1.9 

ID  5.2 A, VGEN = 4.5 V, Rg = 1 

918

ns

Rise Time

tr

13

20

Turn-Off Delay Time

td(off)

17

26

Fall Time

tf

510

Turn-On Delay Time

td(on)

VDD = 10 V, RL = 1.9 

ID  5.2 A, VGEN = 10 V, Rg = 1 

36

Rise Time

tr

10

20

Turn-Off Delay Time

td(off)

13

20

Fall Time

tf

612

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current

IS

TC = 25 °C

2.2

A

Pulse Diode Forward Current

ISM

20

Body Diode Voltage

VSD

IS = 5.2 A, VGS 0 V

0.8

1.2

V

Body Diode Reverse Recovery Time

trr

IF = 5.2 A, dI/dt = 100 A/µs, TJ = 25 °C

10

20

ns

Body Diode Reverse Recovery Charge

Qrr

36

nC

Reverse Recovery Fall Time

ta

6

ns

Reverse Recovery Rise Time

tb

4

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