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SI6562CDQ Folha de dados(PDF) 10 Page - Vishay Telefunken

Nome de Peças SI6562CDQ
Descrição Electrónicos  N- and P-Channel 20-V (D-S) MOSFETs
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Fabricante Electrônico  TFUNK [Vishay Telefunken]
Página de início  http://www.vishay.com
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SI6562CDQ Folha de dados(HTML) 10 Page - Vishay Telefunken

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Document Number: 68954
S-82575-Rev. A, 27-Oct-08
Vishay Siliconix
Si6562CDQ
New Product
P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Current Derating*
0
2
4
6
8
0
25
50
75
100
125
150
TC - Case Temperature (°C)
Power Derating
0.0
0.3
0.6
0.9
1.2
1.5
1.8
25
50
75
100
125
150
TC - Case Temperature (°C)


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