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SIZ340DT Folha de dados(PDF) 3 Page - Vishay Telefunken

Nome de Peças SIZ340DT
Descrição Electrónicos  Dual N-Channel 30 V (D-S) MOSFET
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Fabricante Electrônico  TFUNK [Vishay Telefunken]
Página de início  http://www.vishay.com
Logo TFUNK - Vishay Telefunken

SIZ340DT Folha de dados(HTML) 3 Page - Vishay Telefunken

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SiZ340DT
www.vishay.com
Vishay Siliconix
S14-0611-Rev. B, 24-Mar-14
3
Document Number: 62877
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width
≤ 300 μs, duty cycle ≤ 2 %.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
Dynamic a
Turn-On Delay Time
td(on)
Channel-1
VDD = 15 V, RL = 1.5
Ω
ID
≅ 10 A, VGEN = 4.5 V, Rg = 1 Ω
Chan nel-2
VDD =15 V, RL = 1.5
Ω
ID
≅ 10 A, VGEN = 4.5 V, Rg = 1 Ω
Ch-1
-
13
20
ns
Ch-2
-
22
33
Rise Time
tr
Ch-1
-
55
85
Ch-2
-
82
123
Turn-Off Delay Time
td(off)
Ch-1
-
16
25
Ch-2
-
20
30
Fall Time
tf
Ch-1
-
7
14
Ch-2
-
7
14
Turn-On Delay Time
td(on)
Channel-1
VDD = 15 V, RL = 1.5
Ω
ID
≅ 10 A, VGEN = 10 V, Rg = 1 Ω
Channel-2
VDD =15 V, RL = 1.5
Ω
ID
≅ 10 A, VGEN = 10 V, Rg = 1 Ω
Ch-1
-
8
16
Ch-2
-
10
20
Rise Time
tr
Ch-1
-
11
20
Ch-2
-
12
20
Turn-Off Delay Time
td(off)
Ch-1
-
12
20
Ch-2
-
16
30
Fall Time
tf
Ch-1
-
7
15
Ch-2
-
7
12
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
TC = 25 °C
Ch-1
-
-
13.9
A
Ch-2
-
-
25.8
Pulse Diode Forward Current (t = 100 μs)
ISM
Ch-1
-
-
100
Ch-2
-
-
150
Body Diode Voltage
VSD
IS = 10 A, VGS = 0 V
Ch-1
-
0.8
1.2
V
Ch-2
-
0.82
1.2
Body Diode Reverse Recovery Time
trr
Channel-1
IF = 10 A, dI/dt = 100 A/μs, TJ = 25 °C
Channel-2
IF = 10 A, dI/dt = 100 A/μs, TJ = 25 °C
Ch-1
-
20
35
ns
Ch-2
-
26
40
Body Diode Reverse Recovery Charge
Qrr
Ch-1
-
9
20
nC
Ch-2
-
20
30
Reverse Recovery Fall Time
ta
Ch-1
-
11.5
-
ns
Ch-2
-
18.1
-
Reverse Recovery Rise Time
tb
Ch-1
-
8.5
-
Ch-2
-
7.9
-
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
Parameter
Symbol
TEST CONDITIONS
Min.
Typ.
Max.
Unit


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