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SIZ900DT Folha de dados(PDF) 2 Page - Vishay Telefunken |
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SIZ900DT Folha de dados(HTML) 2 Page - Vishay Telefunken |
2 / 14 page www.vishay.com 2 Document Number: 67344 S11-2380-Rev. C, 28-Nov-11 Vishay Siliconix SiZ900DT New Product This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Notes: a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width 300 µs, duty cycle 2 %. SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Symbol Test Conditions Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 µA Ch-1 30 V VGS = 0 V, ID = 250 µA Ch-2 30 VDS Temperature Coefficient V DS/TJ ID = 250 µA Ch-1 32 mV/°C ID = 250 µA Ch-2 32 VGS(th) Temperature Coefficient V GS(th)/TJ ID = 250 µA Ch-1 - 6 ID = 250 µA Ch-2 - 6.5 Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA Ch-1 1.2 2.4 V VDS = VGS, ID = 250 µA Ch-2 1 2.2 Gate Source Leakage IGSS VDS = 0 V, VGS = ± 20 V Ch-1 ± 100 nA Ch-2 ± 100 Zero Gate Voltage Drain Current IDSS VDS = 30 V, VGS = 0 V Ch-1 1 µA VDS = 30 V, VGS = 0 V Ch-2 1 VDS = 30 V, VGS = 0 V, TJ = 55 °C Ch-1 5 VDS = 30 V, VGS = 0 V, TJ = 55 °C Ch-2 5 On-State Drain Currentb ID(on) VDS 5 V, VGS = 10 V Ch-1 20 A VDS 5 V, VGS = 10 V Ch-2 25 Drain-Source On-State Resistanceb RDS(on) VGS = 10 V, ID = 19.4 A Ch-1 0.0059 0.0072 VGS = 10 V, ID = 20 A Ch-2 0.0032 0.0039 VGS = 4.5 V, ID = 17.2 A Ch-1 0.0075 0.0092 VGS = 4.5 V, ID = 20 A Ch-2 0.0038 0.0047 Forward Transconductanceb gfs VDS = 10 V, ID = 19.4 A Ch-1 76 S VDS = 10 V, ID = 20 A Ch-2 120 Dynamica Input Capacitance Ciss Channel-1 VDS = 15 V, VGS = 0 V, f = 1 MHz Channel-2 VDS = 15 V, VGS = 0 V, f = 1 MHz Ch-1 1830 pF Ch-2 4900 Output Capacitance Coss Ch-1 300 Ch-2 710 Reverse Transfer Capacitance Crss Ch-1 120 Ch-2 280 Total Gate Charge Qg VDS = 15 V, VGS = 10 V, ID = 19.4 A Ch-1 29 45 nC VDS = 15 V, VGS = 10 V, ID = 20 A Ch-2 73 110 Channel-1 VDS = 15 V, VGS = 4.5 V, ID = 19.4 A Channel-2 VDS = 15 V, VGS = 4.5 V, ID = 20 A Ch-1 13.5 21 Ch-2 34 51 Gate-Source Charge Qgs Ch-1 5.8 Ch-2 15 Gate-Drain Charge Qgd Ch-1 3.1 Ch-2 7.3 Gate Resistance Rg f = 1 MHz Ch-1 0.5 2.4 4.8 Ch-2 0.2 0.9 1.8 |
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Descrição semelhante - SIZ900DT |
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