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SI3438DV Folha de dados(PDF) 9 Page - Vishay Telefunken

Nome de Peças SI3438DV
Descrição Electrónicos  N-Channel 40-V (D-S) MOSFET
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SI3438DV Folha de dados(HTML) 9 Page - Vishay Telefunken

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Vishay Siliconix
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Document Number: 71743
27-Feb-04
255 − 260_C
1X4_C/s (max)
3-6_C/s (max)
10 s (max)
Reflow Zone
Pre-Heating Zone
3_C/s (max)
140 − 170_C
Maximum peak temperature at 240_C is allowed.
FIGURE 3.
Solder Reflow Temperature and Time Durations
60-120 s (min)
217_C
60 s (max)
THERMAL PERFORMANCE
A basic measure of a device’s thermal performance is the
junction-to-case
thermal
resistance,
Rqjc,
or
the
junction-to-foot thermal resistance, Rqjf. This parameter is
measured for the device mounted to an infinite heat sink and
is therefore a characterization of the device only, in other
words, independent of the properties of the object to which the
device is mounted. Table 1 shows the thermal performance
of the TSOP-6.
TABLE 1.
Equivalent Steady State Performance—TSOP-6
Thermal Resistance Rqjf
30_C/W
SYSTEM AND ELECTRICAL IMPACT OF
TSOP-6
In any design, one must take into account the change in
MOSFET rDS(on) with temperature (Figure 4).
0.6
0.8
1.0
1.2
1.4
1.6
−50
−25
0
25
50
75
100
125
150
VGS = 4.5 V
ID = 6.1 A
On-Resistance vs. Junction Temperature
TJ − Junction Temperature (_C)
FIGURE 4.
Si3434DV


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