SI7174DP datasheet(1/13 Pages) TFUNK

Nome de Peças	SI7174DP

Descrição Electrónicos	N-Channel 75-V (D-S) MOSFET

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Vishay Siliconix

Si7174DP

New Product

Document Number: 69975

S-80787-Rev. A, 14-Apr-08

www.vishay.com

1

N-Channel 75-V (D-S) MOSFET

FEATURES

•

Halogen-free

•

TrenchFET® Power MOSFET

•

100 % Rg Tested

•

100 % UIS Tested

APPLICATIONS

•

Primary Side Switch

• Synchronous Rectification

PRODUCT SUMMARY

VDS (V)

RDS(on) (Ω)

ID (A)

a, g

Qg (Typ.)

75

0.007 at VGS = 10 V

60

47.5 nC

Ordering Information: Si7174DP-T1-GE3 (Lead (Pb)-free and Halogen-free)

1

2

3

4

5

6

7

8

S

G

D

6.15 mm

5.15 mm

PowerPAK SO-8

Bottom View

N-Channel MOSFET

G

D

S

Notes:

a. Based on TC = 25 °C.

b. Surface mounted on 1" x 1" FR4 board.

c. t = 10 s.

d. See Solder Profile (http://www.vishay.com/ppg?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed

copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed

and is not required to ensure adequate bottom side solder interconnection.

e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.

f. Maximum under Steady State conditions is 54 °C/W.

g. Package limited.

ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted

Parameter

Symbol

Limit

Unit

Drain-Source Voltage

VDS

75

V

Gate-Source Voltage

VGS

± 20

Continuous Drain Current (TJ = 150 °C)

TC = 25 °C

ID

60g

A

TC = 70 °C

60g

TA = 25 °C

21b, c

TA = 70 °C

16.9b, c

Pulsed Drain Current

IDM

80

Continuous Source-Drain Diode Current

TC = 25 °C

IS

60g

TA = 25 °C

5.2b, c

Single Pulse Avalanche Current

L = 0.1 mH

IAS

40

Single Pulse Avalanche Energy

EAS

80

mJ

Maximum Power Dissipation

TC = 25 °C

PD

104

W

TC = 70 °C

66.5

TA = 25 °C

6.25b, c

TA = 70 °C

4.0b, c

Operating Junction and Storage Temperature Range

TJ, Tstg

- 55 to 150

°C

Soldering Recommendations (Peak Temperature)d, e

260

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

Unit

Maximum Junction-to-Ambientb, f

t

≤ 10 s

RthJA

15

20

°C/W

Maximum Junction-to-Case (Drain)

Steady State

RthJC

0.9

1.2

RoHS

COMPLIANT

Nº de peça semelhante - SI7174DP

Fabricante Electrônico	Nome de Peças	Folha de dados	Descrição Electrónicos
Vishay Siliconix	SI7174DP	513Kb / 13P	N-Channel 75-V (D-S) MOSFET Rev. A, 14-Apr-08
	SI7174DP-T1-GE3	513Kb / 13P	N-Channel 75-V (D-S) MOSFET Rev. A, 14-Apr-08
	SI7174DP	346Kb / 13P	N-Channel 75-V (D-S) MOSFET 01-Jan-2022

More results

Descrição semelhante - SI7174DP

Fabricante Electrônico	Nome de Peças	Folha de dados	Descrição Electrónicos
Vishay Siliconix	SUP90N08-6M8P	176Kb / 7P	N-Channel 75-V (D-S) MOSFET Rev. C, 16-Nov-09
	SUM90N08-6M2P	116Kb / 6P	N-Channel 75-V (D-S) MOSFET Rev. A, 03-Dec-07
	SUP90N08-6M8P	116Kb / 6P	N-Channel 75-V (D-S) MOSFET Rev. A, 03-Dec-07
	SUP90N08-4M8P	104Kb / 6P	N-Channel 75-V (D-S) MOSFET Rev. C, 06-Aug-07
	SI7812DN	551Kb / 14P	N-Channel 75-V (D-S) MOSFET Rev. D, 29-Dec-08
Analog Power	AM230N07-03B	334Kb / 5P	N-Channel 75-V (D-S) MOSFET
	AM90N07-04B	364Kb / 5P	N-Channel 75-V (D-S) MOSFET
	AM90N07-09B	336Kb / 5P	N-Channel 75-V (D-S) MOSFET
Vishay Siliconix	SIE818DF	192Kb / 10P	N-Channel 75-V (D-S) MOSFET Rev. B, 13-Jul-09
	SUM110N08-07	51Kb / 5P	N-Channel 75-V (D-S) MOSFET Rev. C, 21-Oct-02
	SI7174DP	513Kb / 13P	N-Channel 75-V (D-S) MOSFET Rev. A, 14-Apr-08

More results

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