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SI2392ADS Folha de dados(PDF) 1 Page - Vishay Telefunken |
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SI2392ADS Folha de dados(HTML) 1 Page - Vishay Telefunken |
1 / 10 page Si2392ADS www.vishay.com Vishay Siliconix S14-0909-Rev. A, 28-Apr-14 1 Document Number: 62960 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 N-Channel 100 V (D-S) MOSFET Marking Code: G2 Ordering Information: Si2392ADS-T1-GE3 (Lead (Pb)-free and Halogen-free) FEATURES • TrenchFET® power MOSFET • 100 % Rg and UIS tested • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • DC/DC converters / boost converters •Load switch • LED backlighting in LCD TVs • Power management for mobile computing Notes a. Based on TC = 25 °C. b. Surface mounted on 1" x 1" FR4 board. c. t = 5 s. d. Maximum under steady state conditions is 166 °C/W. PRODUCT SUMMARY VDS (V) RDS(on) ( Ω) MAX. ID (A) a Qg (TYP.) 100 0.126 at VGS = 10 V 3.1 2.9 nC 0.144 at VGS = 6 V 2.9 0.189 at VGS = 4.5 V 2.6 Top View SOT-23 (TO-236) 1 G 2 S D 3 N-Channel MOSFET G D S ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage VDS 100 V Gate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 150 °C) TC = 25 °C ID 3.1 A TC = 70 °C 2.5 TA = 25 °C 2.2 b, c TA = 70 °C 1.8 b, c Pulsed Drain Current (t = 300 μs) IDM 8 Continuous Source-Drain Diode Current TC = 25 °C IS 2.1 TA = 25 °C 1 b, c Single Pulse Avalanche Current L = 0.1 mH IAS 3 Single Pulse Avalanche Energy EAS 0.45 mJ Maximum Power Dissipation TC = 25 °C PD 2.5 W TC = 70 °C 1.6 TA = 25 °C 1.25 b, c TA = 70 °C 0.8 b, c Operating Junction and Storage Temperature Range TJ, Tstg -55 to 150 °C THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYPICAL MAXIMUM UNIT Maximum Junction-to-Ambient b, d t ≤ 5 s RthJA 75 100 °C/W Maximum Junction-to-Foot (Drain) Steady State RthJF 40 50 |
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