SI4102DY datasheet(1/10 Pages) TFUNK

Nome de Peças	SI4102DY

Descrição Electrónicos	N-Channel 100 V (D-S) MOSFET

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Vishay Siliconix

Si4102DY

Document Number: 69252

S13-0631-Rev. C, 25-Mar-13

www.vishay.com

1

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

For technical questions, contact: pmostechsupport@vishay.com

N-Channel 100 V (D-S) MOSFET

FEATURES

•

TrenchFET® Power MOSFET

•100 % UIS Tested

•

Material categorization:

For definitions of compliance please see

www.vishay.com/doc?99912

APPLICATIONS

•

High Frequency Boost Converter

•

LED Backlight for LCD TV

Notes:

a. Surface mounted on 1" x 1" FR4 board.

b. t = 10 s.

c. Maximum under steady state conditions is 85 °C/W.

d. Based on TC = 25 °C.

PRODUCT SUMMARY

VDS (V)

RDS(on) ()

ID (A)

d

Qg (Typ.)

100

0.158 at VGS = 10 V

3.8

4.6 nC

0.175 at VGS = 6 V

3.6

ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)

Parameter

Symbol

Limit

Unit

Drain-Source Voltage

VDS

100

V

Gate-Source Voltage

VGS

± 20

Continuous Drain Current (TJ = 150 °C)

TC = 25 °C

ID

3.8

A

TC = 70 °C

3

TA = 25 °C

2.7a, b

TA = 70 °C

2.1a, b

Pulsed Drain Current

IDM

8

Continuous Source-Drain Diode Current

TC = 25 °C

IS

4

TA = 25 °C

2a, b

Single Avalanche Current

L = 0.1 mH

IAS

6

A

Single Avalanche Energy

EAS

1.8

mJ

Maximum Power Dissipation

TC = 25 °C

PD

4.8

W

TC = 70 °C

3

TA = 25 °C

2.4a, b

TA = 70 °C

1.5a, b

Operating Junction and Storage Temperature Range

TJ, Tstg

- 55 to 150

°C

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

Unit

Maximum Junction-to-Ambienta, c

t

 10 s

RthJA

42

53

°C/W

Maximum Junction-to-Foot (Drain)

Steady State

RthJF

21

26

D

S

D

G

D

SO-8

5

6

7

8

Top View

2

3

4

1

Ordering Information: Si4102DY-T1-GE3 (Lead (Pb)-free and Halogen-free)

S

N-Channel MOSFET

G

D

S

Nº de peça semelhante - SI4102DY

Fabricante Electrônico	Nome de Peças	Folha de dados	Descrição Electrónicos
Vishay Siliconix	SI4102DY	209Kb / 4P	N-Channel 100-V (D-S) MOSFET Rev. A, 08-Oct-07
SHENZHEN DOINGTER SEMIC...	SI4102DY	1Mb / 6P	N-Channel MOSFET uses advanced trench technology
VBsemi Electronics Co.,...	SI4102DY-T1-E3	464Kb / 9P	N-Channel 100 V (D-S) MOSFET
Vishay Siliconix	SI4102DY-T1-GE3	246Kb / 10P	N-Channel 100 V (D-S) MOSFET Rev. C, 25-Mar-13

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Descrição semelhante - SI4102DY

Fabricante Electrônico	Nome de Peças	Folha de dados	Descrição Electrónicos
Vishay Siliconix	SI2328DS	41Kb / 4P	N-Channel 100-V (D-S) MOSFET Rev. A, 25-Dec-01
	SIR870ADP_1209	481Kb / 13P	N-Channel 100 V (D-S) MOSFET Rev. A, 28-Nov-11
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Analog Power	AM90N10-07B	365Kb / 5P	N-Channel 100-V (D-S) MOSFET
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	SUA70060E	200Kb / 8P	N-Channel 100 V (D-S) MOSFET Rev. A, 06-Jun-16
	SUD70090E	201Kb / 8P	N-Channel 100 V (D-S) MOSFET Rev. A, 01-Feb-16
	SI2392DS	245Kb / 10P	N-Channel 100 V (D-S) MOSFET Rev. A, 15-Apr-13

More results

SI4102DY Folha de dados(PDF) 1 Page - Vishay Telefunken

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