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2N3720 Folha de dados(PDF) 2 Page - Microsemi Corporation

Nome de Peças 2N3720
Descrição Electrónicos  Silicon PNP Power Transistors
Download  3 Pages
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Fabricante Electrônico  MICROSEMI [Microsemi Corporation]
Página de início  http://www.microsemi.com
Logo MICROSEMI - Microsemi Corporation

2N3720 Folha de dados(HTML) 2 Page - Microsemi Corporation

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MSC1027.PDF 02-24-99
2N3720
ELECTRICAL CHARACTERISTICS:
ELECTRICAL CHARACTERISTICS:
(25
°°Case Temperature Unless Otherwise Noted)
VALUE
SYMBOL
CHARACTERISTIC
TEST CONDITIONS
Min.
Max.
Units
VCEO(sus)*
Collector-Emitter
Sustaining Voltage
IC = 20 mAdc, IB = 0 (Note 1)
60
----
Vdc
ICEX*
Collector Cutoff Current
VCE = 60 Vdc, VBE(off) = 2.0 Vdc
VCE = 60 Vdc, VBE(off) = 2.0 Vdc, TC = 150°°C
----
----
10
1.0
µAdc
mAdc
ICBO*
Collector Cutoff Current
VCB = 60 Vdc, IE = 0
----
10
µAdc
IEBO*
Emitter Cutoff Current
VBE = 4.0 Vdc, IC = 0
----
1.0
mAdc
hFE
*
DC Current Gain
(Note 1)
IC = 500 mAdc, VCE = 1.5 Vdc
IC = 1.0 Adc, VCE = 1.5 Vdc
IC = 1.0 Adc, VCE = 1.5 Vdc, TC = - 40°°C
20
25
15
----
180
----
----
----
----
VCE(sat)*
Collector-Emitter
Saturation Voltage
(Note 1)
IC = 1.0 Adc, IB = 100 mAdc, TC = - 40°°C to + 100°°C
IC = 3.0 Adc, IB = 300 mAdc, TC = - 40°°C to + 100°°C
----
----
0.75
1.5
Vdc
Vdc
VBE(sat)*
Base-Emitter Saturation
Voltage
(Note 1)
IC = 1.0 Adc, IB = 100 mAdc, TC = - 40°°C to + 100°°C
IC = 3.0 Adc, IB = 300 mAdc, TC = - 40°°C to + 100°°C
----
----
1.5
2.3
Vdc
Vdc
fT*
Current-Gain Bandwidth
Product
(Note 2)
IC = 500 mAdc, VCE = 10 Vdc, ftest = 30 MHz
60
----
MHz
Cob*
Output Capacitance
VCB = 10 Vdc, IE = 0, f = 0.1 MHz
----
120
pF
Cib*
Input Capacitance
VEB = 0.5 Vdc, IC = 0, f = 0.1 MHz
----
1000
pF
ton*
Turn-on Time
VCC = 12 Vdc, VBE(off) = 0, IC = 1.0 Adc, IB1 = 0.1 Adc
----
100
ns
toff*
Turn-off Time
VCC = 12 Vdc, IC = 1.0 Adc, IB1 = IB2 = 100 mAdc
----
400
ns
Note 1: Pulse Test: Pulse width
≤≤ 300µµS, Duty Cycle = 2.0%.
Note 2: fT = | hfe | * ftest
* Indicates JEDEC registered data


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