2N5031 datasheet(1/4 Pages) MICROSEMI

Nome de Peças	2N5031

Descrição Electrónicos	RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

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Fabricante Electrônico	MICROSEMI [Microsemi Corporation]

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MSC1303.PDF 10-25-99

2N5031

DESCRIPTION:

General Purpose small-signal, pre-driver, and driver, applications targeted for military and industrial

equipment.

ABSOLUTE MAXIMUM RATINGS (Tcase = 25

°C)

Symbol

Parameter

Value

Unit

VCEO

Collector-Emitter Voltage

10

Vdc

VCBO

Collector-Base Voltage

15

Vdc

VEBO

Emitter-Base Voltage

3.0

Vdc

IC

Collector Current

20

mA

Thermal Data

P

D

Total Device Dissipation @ TA = 25ºC

Derate above 25ºC

200

1.14

mWatts

mW/ ºC

1

2

3

4

1. Emitter

2. Base

3. Collector

4. Case

TO-72

Features

• Silicon NPN, To-72 packaged VHF/UHF Transistor

• 1.2 GHz Current-Gain Bandwidth Product @ 5mA IC

• Maximum Unilateral Gain – 12 dB (typ) @ 400 MHz

RF & MICROWAVE DISCRETE

LOW POWER TRANSISTORS

140 COMMERCE DRIVE

MONTGOMERYVILLE, PA

18936-1013

PHONE: (215) 631-9840

FAX: (215) 631-9855

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