2N5031 datasheet(2/4 Pages) MICROSEMI

Nome de Peças	2N5031

Descrição Electrónicos	RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

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Fabricante Electrônico	MICROSEMI [Microsemi Corporation]

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MSC1303.PDF 10-25-99

2N5031

ELECTRICAL SPECIFICATIONS (Tcase = 25

°C)

STATIC

(off)

Symbol

Test Conditions

Value

Min.

Typ.

Max.

Unit

BVCEO

Collector-Emitter Breakdown Voltage

(IC = 1.0 mAdc, IB = 0)

10

-

Vdc

BVCBO

Collector-Base Breakdown Voltage

(IC= 0.01 mAdc, IE=0)

15

-

Vdc

BVEBO

Emitter-Base Breakdown Voltage

(IE = 0.01mAdc, IC = 0)

3.0

-

Vdc

ICBO

Collector Cutoff Current

(VCE = 6.0 Vdc, IE = 0 Vdc)

-

1.0

10

nA

(on)

HFE

DC Current Gain

(IC = 1.0 mAdc, VCE = 6.0 Vdc)

25

-

300

-

DYNAMIC

Symbol

Test Conditions

Value

Min.

Typ.

Max.

Unit

fT

Current-Gain - Bandwidth Product

(IC = 5.0 mAdc, VCE = 6 Vdc, f = 100 MHz)

1200

-

2500

MHz

CCB

Output Capacitance

(IC = 1.0 mAdc, VCE = 6 Vdc, f = 450 MHz)

-

2.5

-

dB

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