MTB9N25E

http://onsemi.com

2

Rating

Symbol

Value

Unit

Drain−to−Source Voltage

250

Vdc

250

Vdc

Gate−to−Source Voltage — Continuous

± 20

± 40

Vdc

Vpk

Drain Current — Continuous

— Continuous @ 100°C

9.0

5.7

32

Adc

Apk

Total Power Dissipation @ 25°C

Derate above 25°C

80

0.64

2.5

Watts

W/°C

Watts

Operating and Storage Temperature Range

− 55 to 150

°C

122

mJ

Thermal Resistance — Junction to Case

— Junction to Ambient

1.56

62.5

50

°C/W

Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 10 seconds

260

°C

(1) When surface mounted to an FR4 board using the minimum recommended pad size.

Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit

curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.

E−FET and Designer’s are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.

Thermal Clad is a trademark of the Bergquist Company.

Preferred devices are Motorola recommended choices for future use and best overall value.