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SS24-M3 Folha de dados(PDF) 1 Page - Vishay Siliconix |
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SS24-M3 Folha de dados(HTML) 1 Page - Vishay Siliconix |
1 / 4 page SS22-M3, SS23-M3, SS24-M3, SS25-M3, SS26-M3 www.vishay.com Vishay General Semiconductor Revision: 04-Aug-15 1 Document Number: 89278 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Surface Mount Schottky Barrier Rectifier TYPICAL APPLICATIONS For use in low voltage high frequency inverters, freewheeling, DC/DC converters, and polarity protection applications. FEATURES • Low profile package • Ideal for automated placement • Guardring for overvoltage protection • Low power losses, high efficiency • Low forward voltage drop • High surge capability • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 MECHANICAL DATA Case: DO-214AA (SMB) Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS-compliant, and commercial grade Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 M3 suffix meets JESD 201 class 2 whisker test Polarity: Color band denotes cathode end Note (1) Pulse test: 300 μs pulse width, 1 % duty cycle PRIMARY CHARACTERISTICS IF(AV) 2.0 A VRRM 20 V, 30 V, 40 V, 50 V, 60 V IFSM 75 A VF 0.50 V, 0.70 V TJ max. 150 °C Package DO-214AA (SMB) Diode variations Single DO-214AA (SMB) MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL SS22 SS23 SS24 SS25 SS26 UNIT Device marking code S2 S3 S4 S5 S6 Maximum repetitive peak reverse voltage VRRM 20 30 40 50 60 V Maximum RMS voltage VRMS 14 21 28 35 42 V Maximum DC blocking voltage VDC 20 30 40 50 60 V Max. average forward rectified current at TL (fig. 1) IF(AV) 2.0 A Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load IFSM 75 A Non-repetitive avalanche energy at TA = 25 °C, IAS = 2.0 A, L = 10 mH EAS 20 mJ Electrostatic discharge capacitor voltage human body model: C = 100 pF, R = 1.5 k VC 8.0 kV Voltage rate of change (rated VR) dV/dt 10 000 V/μs Operating junction temperature range TJ -65 to +150 °C Storage temperature range TSTG -65 to +150 °C ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS SYMBOL SS22 SS23 SS24 SS25 SS26 UNIT Maximum instantaneous forward voltage (1) 2.0 A VF 0.5 0.7 V Maximum DC reverse current at rated DC blocking voltage (1) TA = 25 °C IR 0.4 mA TA = 100 °C 10 |
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Descrição semelhante - SS24-M3 |
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