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ACE9060M Folha de dados(PDF) 1 Page - ACE Technology Co., LTD. |
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ACE9060M Folha de dados(HTML) 1 Page - ACE Technology Co., LTD. |
1 / 7 page ACE9060M N-Channel 60-V MOSFET VER 1.1 1 Description ACE9060M uses advanced trench technology to provide excellent RDS(ON). This device particularly suits for low voltage application such as power management of desktop computer or notebook computer power management, DC/DC converter. Features • Low r DS(on) trench technology • Low thermal impedance • Fast switching speed Applications: • Automotive Systems • DC/DC Conversion Circuits • Battery Powered Power Tools Absolute Maximum Ratings Parameter Symbol Limit Unit Drain-Source Voltage VDS 60 V Gate-Source Voltage VGS ±20 Continuous Drain Current a TC=25°C ID 90 A Pulsed Drain Current b IDM 240 Continuous Source Current (Diode Conduction) a IS 90 A Power Dissipation a TC=25°C PD 300 W Operating Junction and Storage Temperature Range TJ, Tstg -55 to 175 °C THERMAL RESISTANCE RATINGS Parameter Symbol Maximum Unit Maximum Junction-to-Ambient RθJA 62.5 °C/W Maximum Junction-to-Case RθJC 1 Notes A .Package Limited. B. Pulse width limited by maximum junction temperature |
Nº de peça semelhante - ACE9060M |
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Descrição semelhante - ACE9060M |
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