MMSF3350R2 datasheet(3/12 Pages) ONSEMI

Nome de Peças	MMSF3350R2

Descrição Electrónicos	Single N?묬hannel Field Effect Transistor

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Fabricante Electrônico	ONSEMI [ON Semiconductor]

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MMSF3350

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ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage

(VGS = 0 Vdc, ID = 250 mAdc)

Temperature Coefficient (Positive)

V(BR)DSS

30

−

33

23

−

Vdc

mV/°C

Zero Gate Voltage Drain Current

(VDS = 30 Vdc, VGS = 0 Vdc)

(VDS = 30 Vdc, VGS = 0 Vdc, TJ = 125°C)

IDSS

−

0.003

0.4

1.0

10

mAdc

Gate−Body Leakage Current (VGS = ± 20 Vdc, VDS = 0 Vdc)

IGSS

−

2.0

100

nAdc

ON CHARACTERISTICS(1)

Gate Threshold Voltage

(VDS = VGS, ID = 250 mAdc)

Threshold Temperature Coefficient (Negative)

VGS(th)

1.0

−

2.0

4.6

−

Vdc

mV/°C

Static Drain−to−Source On−Resistance

(VGS = 10 Vdc, ID = 10 Adc)

(VGS = 4.5 Vdc, ID = 5.0 Adc)

RDS(on)

−

9.4

14.4

11

17

mW

Forward Transconductance (VDS = 15 Vdc, ID = 10 Adc)

gFS

12

17

−

Mhos

DYNAMIC CHARACTERISTICS

Input Capacitance

(VDS = 24 Vdc, VGS = 0 Vdc,

f = 1.0 MHz)

Ciss

−

1680

−

pF

Output Capacitance

Coss

−

540

−

Transfer Capacitance

Crss

−

185

−

SWITCHING CHARACTERISTICS(2)

Turn−On Delay Time

(VDD = 25 Vdc, ID = 1.0 Adc,

VGS = 4.5 Vdc,

RG = 6.0 W)

td(on)

−

21

40

ns

Rise Time

tr

−

50

90

Turn−Off Delay Time

td(off)

−

42

80

Fall Time

tf

−

44

80

Turn−On Delay Time

(VDD = 25 Vdc, ID = 1.0 Adc,

VGS = 10 Vdc,

RG = 6.0 W)

td(on)

−

12

20

ns

Rise Time

tr

−

15

30

Turn−Off Delay Time

td(off)

−

60

100

Fall Time

tf

−

44

80

Gate Charge

(VDS = 15 Vdc, ID = 2.0 Adc,

VGS = 10 Vdc)

QT

−

46

60

nC

Q1

−

4.5

−

Q2

−

12.8

−

Q3

−

9.8

−

SOURCE−DRAIN DIODE CHARACTERISTICS

Forward On−Voltage (1)

(IS = 2.3 Adc, VGS = 0 Vdc)

(IS = 2.3 Adc, VGS = 0 Vdc, TJ =

125°C)

VSD

−

0.76

0.58

1.0

−

Vdc

Reverse Recovery Time

(IS = 3.5 Adc, VGS = 0 Vdc,

dIS/dt = 100 A/ms)

trr

−

41

−

ns

ta

−

21

−

tb

−

20

−

Reverse Recovery Stored Charge

QRR

−

0.049

−

mC

1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.

2. Switching characteristics are independent of operating junction temperatures.

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