BC848T datasheet(4/9 Pages) INFINEON

Nome de Peças	BC848T

Descrição Electrónicos	NPN Silicon AF Transistors

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Fabricante Electrônico	INFINEON [Infineon Technologies AG]

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4 / 9 page

BC846T...BC850T

4

Aug-01-2002

Electrical Characteristicsat TA = 25°C, unless otherwise specified.

Parameter

Symbol

Values

Unit

min.

typ.

max.

AC Characteristics

Transition frequency

IC = 20 mA, VCE = 5 V, f = 100 MHz

fT

-

250

-

MHz

Collector-base capacitance

VCB = 10 V, f = 1 MHz

Ccb

-

3

-

pF

Emitter-base capacitance

VEB = 0.5 V, f = 1 MHz

Ceb

-

8

-

Short-circuit input impedance

IC = 2 mA, VCE = 5 V, f = 1 kHz

hFE-group A

IC = 2 mA, VCE = 5 V, f = 1 kHz

hFE-group B

IC = 2 mA, VCE = 5 V, f = 1 kHz

hFE-group C

h11e

-

2.7

4.7

8.7

-

k

Open-circuit reverse voltage transf.ratio

IC = 2 mA, VCE = 5 V, f = 1 kHz

hFE-group A

IC = 2 mA, VCE = 5 V, f = 1 kHz

hFE-group B

IC = 2 mA, VCE = 5 V, f = 1 kHz

hFE-group C

h12e

-

1.5

2

3

-

10-4

Short-circuit forward current transf.ratio

IC = 2 mA, VCE = 5 V, f = 1 kHz

hFE-group A

IC = 2 mA, VCE = 5 V, f = 1 kHz

hFE-group B

IC = 2 mA, VCE = 5 V, f = 1 kHz

hFE-group C

h21e

-

200

330

600

-

Open-circuit output admittance

IC = 2 mA, VCE = 5 V, f = 1 kHz

hFE-group A

IC = 2 mA, VCE = 5 V, f = 1 kHz

hFE-group B

IC = 2 mA, VCE = 5 V, f = 1 kHz

hFE-group C

h22e

-

18

30

60

-

S

Nº de peça semelhante - BC848T

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SHENZHEN YONGERJIA INDU...	BC848	187Kb / 2P	NPN SILICON TRANSISTOR
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Descrição semelhante - BC848T

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Siemens Semiconductor G...	BC817	130Kb / 5P	NPN Silicon AF Transistors
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Guangdong Kexin Industr...	KC818W	67Kb / 1P	NPN Silicon AF Transistors
Infineon Technologies A...	BC846AE6327	881Kb / 13P	NPN Silicon AF Transistors 2011-09-09
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