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CDCLVP1204RGTT Folha de dados(PDF) 5 Page - Texas Instruments

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Nome de Peças CDCLVP1204RGTT
Descrição Electrónicos  Four LVPECL Output, High-Performance Clock Buffer
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Fabricante Electrônico  TI1 [Texas Instruments]
Página de início  http://www.ti.com
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CDCLVP1204RGTT Folha de dados(HTML) 5 Page - Texas Instruments

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CDCLVP1204
www.ti.com
SCAS880F – AUGUST 2009 – REVISED SEPTEMBER 2015
6 Specifications
6.1 Absolute Maximum Ratings
over operating free-air temperature range (unless otherwise noted)
(1)
MIN
MAX
UNIT
VCC
Supply voltage range(2)
–0.5
4.6
V
VIN
Input voltage range(3)
–0.5
VCC + 0.5
V
VOUT
Output voltage range(3)
–0.5
VCC + 0.5
V
IIN
Input current
20
mA
IOUT
Output current
50
mA
TA
Specified free-air temperature range (no airflow)
–40
85
°C
TJ
Maximum junction temperature
125
°C
Tstg
Storage temperature
–65
150
°C
(1)
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended
Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability..
(2)
All supply voltages must be supplied simultaneously.
(3)
The input and output negative voltage ratings may be exceeded if the input and output clamp-current ratings are observed.
6.2 ESD Ratings
VALUE
UNIT
V(ESD)
Electrostatic discharge
Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1)
±2000
V
(1)
JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
6.3 Recommended Operating Conditions
Over operating free-air temperature range (unless otherwise noted).
MIN
NOM
MAX
UNIT
VCC
Supply voltage
2.375
2.50/3.30
3.60
V
TA
Ambient temperature
–40
85
°C
TPCB
PCB temperature (measured at thermal pad)
105
°C
6.4 Thermal Information
CDCLVP1204
THERMAL METRIC(1)(2)(3)
RGT (QFN)
UNIT
16 PINS
RθJA
51.8, 0 LFM(4)
Junction-to-ambient thermal resistance
22.6, 150 LFM(4)
°C/W
19.2, 400 LFM(4)
RθJC(top)
Junction-to-case (top) thermal resistance
79
°C/W
RθJP
(5)
Junction-to-pad thermal resistance
6.12(4)
°C/W
ψJT
Junction-to-top characterization parameter
1.4
°C/W
ψJB
Junction-to-board characterization parameter
19
°C/W
RθJC(bot)
Junction-to-case (bottom) thermal resistance
6.12
°C/W
(1)
For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report, SPRA953.
(2)
The package thermal resistance is calculated in accordance with JESD 51 and JEDEC 2S2P (high-K board).
(3)
Connected to GND with four thermal vias (0.3-mm diameter).
(4)
2 x 2 vias on Pad
(5)
RθJP (junction-to-pad) is used for the QFN package, because the primary heat flow is from the junction to the GND pad of the QFN
package.
Copyright © 2009–2015, Texas Instruments Incorporated
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