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DAC8811ICDGKTG4 Folha de dados(PDF) 5 Page - Texas Instruments

Nome de Peças DAC8811ICDGKTG4
Descrição Electrónicos  16-Bit, Serial Input Multiplying Digital-to-Analog Converter
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Fabricante Electrônico  TI1 [Texas Instruments]
Página de início  http://www.ti.com
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DAC8811ICDGKTG4 Folha de dados(HTML) 5 Page - Texas Instruments

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DAC8811
www.ti.com
SLAS411D – NOVEMBER 2004 – REVISED FEBRUARY 2016
Product Folder Links: DAC8811
Submit Documentation Feedback
Copyright © 2004–2016, Texas Instruments Incorporated
(1)
Stresses above those listed under absolute maximum ratings may cause permanent damage to the device. Exposure to absolute
maximum conditions for extended periods may affect device reliability.
7 Specifications
7.1 Absolute Maximum Ratings
over operating free-air temperature range (unless otherwise noted)
(1)
MIN
MAX
UNIT
Input voltage
VDD to GND
–0.3
7
V
V (IOUT) to GND
–0.3
VDD + 0.3
V
Digital input voltage
GND
–0.3
VDD + 0.3
V
Reference voltage, VREF
RFB to GND
–25
25
V
Operating temperature
–40
105
°C
Junction temperature, TJ
125
°C
Storage temperature, Tstg
–65
150
(1)
JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2)
JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
7.2 ESD Ratings
MAX
UNIT
V(ESD)
Electrostatic discharge
Human body model (HBM), per ANSI/ESDA/JEDEC JS-001(1)
±4000
V
Charged device model (CDM), per JEDEC specification JESD22-
C101(2)
±1000
7.3 Recommended Operating Conditions
over operating free-air temperature range (unless otherwise noted)
MIN
NOM
MAX
UNIT
Supply voltage to GND
2.7
5.5
V
Operating ambient temperature, TA
–40
125
°C
(1)
For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report, SPRA953.
7.4 Thermal Information
THERMAL METRIC(1)
DAC8811
UNIT
DGK (VSSOP)
DRB (VSON)
8 PINS
8 PINS
RθJA
Junction-to-ambient thermal resistance
169.6
46.7
°C/W
RθJC(top)
Junction-to-case (top) thermal resistance
64.2
61.3
°C/W
RθJB
Junction-to-board thermal resistance
90.3
22
°C/W
ψJT
Junction-to-top characterization parameter
7.7
1.1
°C/W
ψJB
Junction-to-board characterization parameter
88.8
22.1
°C/W
RθJC(bot)
Junction-to-case (bottom) thermal resistance
N/A
3.8
°C/W


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