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CD6215B Folha de dados(PDF) 3 Page - Powerex Power Semiconductors |
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CD6215B Folha de dados(HTML) 3 Page - Powerex Power Semiconductors |
3 / 4 page Powerex, Inc., Hillis Street, Youngwood, Pennsylvania 15697 (724) 925-7272 POW-R-BLOK TM Dual SCR/Diode Isolated Module 150 Amperes / Up to 1800 Volts Revision Date: 04/28/2009 CD62__15B CD67__15B Electrical Characteristics, TJ=25°C unless otherwise specified Characteristics Symbol Test Conditions Min. Max. Units Repetitive Peak Forward Leakage Current IDRM Up to 1600V, TJ=125°C 50 mA Repetitive Peak Reverse Leakage Current IRRM Up to 1600V, TJ=125°C 50 mA Peak On-State Voltage VTM / VFM ITM / IFM =500A 1.6 V Threshold Voltage, Low-level Slope Resistance, Low-level V(TO)1 rT1 TJ = 125°C, I = 16.7% x πIT(AV) to πIT(AV) 0.85 1.5 V m Ω Minimum dV/dt dV/dt Exponential to 2/3 VDRM Tj=125°C, Gate Open 1000 V/µs Turn-Off Time (Typical) t off TJ = 125°C, IT= 300A, Rgk = 100Ω Vr = 50V, -dI/dt=15 A/µs Re-Applied dV/dt = 20V/µs, Linear to 2/3 VDRM 50 - 200 (Typical) µs Gate Trigger Current IGT Tj= 25°C, VD=6V, Ra=1Ω Resistive Load 150 mA Gate Trigger Voltage VGT Tj= 25°C, VD=6V, Ra=1Ω, Resistive Load 2.0 Volts Non-Triggering Gate Voltage VGDM Tj=125°C, VD=VDRM 0.25 Volts Non-Triggering Gate Current IGDM Tj=125°C, VD=VDRM 10 mA Holding Current IH TJ=25°C 150 (Typical) mA Latching Current IL TJ=25°C 300 (Typical) mA Thermal Characteristics Characteristics Symbol Max. Units Thermal Resistance, Junction to Case DC Operation RΘJ-C Per Module, both conducting Per Junction, both conducting 0.085 0.17 °C/W °C/W Thermal Resistance, Case to Sink Lubricated RΘC-S Per Module 0.05 °C/W Information presented is based upon manufacturers testing and projected capabilities. This information is subject to change without notice. The manufacturer makes no claim as to the suitability of use, reliability, capability, or future availability of this product. |
Nº de peça semelhante - CD6215B |
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Descrição semelhante - CD6215B |
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