STB27NM60ND datasheet(3/19 Pages) STMICROELECTRONICS

Nome de Peças	STB27NM60ND

Descrição Electrónicos	Low input capacitance and gate charge

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Fabricante Electrônico	STMICROELECTRONICS [STMicroelectronics]

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3 / 19 page

DocID15406 Rev 4

3/19

STB27NM60ND, STW27NM60ND

Electrical ratings

19

1

Electrical ratings

Table 2. Absolute maximum ratings

Symbol

Parameter

Value

Unit

VDS

Drain-source voltage

600

V

VGS

Gate-source voltage

±25

V

ID

Drain current (continuous) at TC = 25 °C

21

A

ID

Drain current (continuous) at TC = 100 °C

13

A

IDM

(1)

1.

Pulse width limited by safe operating area

Drain current (pulsed)

84

A

PTOT

Total dissipation at TC = 25 °C

160

W

dv/dt(2)

2.

ISD ≤ 21 A, di/dt ≤ 600 A/µs, VDD = 80% V(BR)DSS

Peak diode recovery voltage slope

40

V/ns

Tstg

Storage temperature

–55 to 150

°C

TJ

Max. operating junction temperature

150

°C

Table 3. Thermal data

Symbol

Parameter

D²PAK

TO-247

Unit

Rthj-case

Thermal resistance junction-case max

0.78

°C/W

Rthj-amb

Thermal resistance junction-ambient max

50

°C/W

Rthj-pcb

(1)

1.

When mounted on 1inch² FR-4 board, 2 oz Cu

Thermal resistance junction-ambient max

30

°C/W

Table 4. Avalanche characteristics

Symbol

Parameter

Max value

Unit

IAS

Avalanche current, repetitive or not-repetitive

(pulse width limited by TJ max)

10

A

EAS

Single pulse avalanche energy

(starting TJ = 25 °C, ID = IAS, VDD = 50 V)

850

mJ

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