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STP150NF04 Folha de dados(PDF) 3 Page - STMicroelectronics |
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STP150NF04 Folha de dados(HTML) 3 Page - STMicroelectronics |
3 / 12 page STP150NF04 Electrical ratings Doc ID 14848 Rev 3 3/12 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage (VGS = 0) 40 V VGS Gate- source voltage ± 20 V ID (1) 1. Current limited by package Drain current (continuous) at TC = 25 °C 80 A ID (1) Drain current (continuous) at TC = 100 °C 80 A IDM (2) 2. Pulse width limited by safe operating area Drain current (pulsed) 320 A Ptot Total dissipation at TC = 25 °C 300 W Derating factor 2 W/°C dv/dt (3) 3. ISD ≤ 80A, di/dt ≤ 300 A/µs, VDD= 80%V(BR)DSS Peak diode recovery voltage slope 2 V/ns EAS (4) 4. Starting Tj = 25 °C, ID= 40 A, VDD=30 V Single pulse avalanche energy 0.6 J Tstg Storage temperature -55 to 175 °C Tj Max. operating junction temperature Table 3. Thermal resistance Symbol Parameter Value Unit Rthj-case Thermal resistance junction-case max 0.5 °C/W Rthj-pcb (1) 1. When mounted on 1inch² FR-4 board, 2 oz of Cu Thermal resistance junction-pcb max 35 °C/W |
Nº de peça semelhante - STP150NF04 |
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Descrição semelhante - STP150NF04 |
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