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STPSC1206 Folha de dados(PDF) 1 Page - STMicroelectronics

Nome de Peças STPSC1206
Descrição Electrónicos  600 V power Schottky silicon carbide diode
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Fabricante Electrônico  STMICROELECTRONICS [STMicroelectronics]
Página de início  http://www.st.com
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STPSC1206 Folha de dados(HTML) 1 Page - STMicroelectronics

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September 2009
Doc ID 16288 Rev 1
1/7
7
STPSC1206
600 V power Schottky silicon carbide diode
Features
No reverse recovery
Switching behavior independent of
temperature
Dedicated to PFC boost diode
Description
These diodes are manufactured using silicon
carbide substrate. This wide bandgap material
supports the manufacture of a Schottky diode
structure with a high voltage rating. Such diodes
exhibit no or negligible recovery characteristics.
The recovery characteristics are independent of
the temperature.
Using these diodes will significantly reduce the
switching power losses of the associated MOS-
FET, and thus increase the efficiency of the
overall application. These diodes will then
outperform the power factor correction circuit
operating in hard switching conditions.
Table 1.
Device summary
IF(AV)
12 A
VRRM
600 V
Tj (max)
175 °C
QC (typ)
12 nC
K
A
TO-220AC
STPSC1206D
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