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STGB10M65DF2 Folha de dados(PDF) 6 Page - STMicroelectronics |
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STGB10M65DF2 Folha de dados(HTML) 6 Page - STMicroelectronics |
6 / 20 page Electrical characteristics STGB10M65DF2 6/20 DocID027429 Rev 5 Symbol Parameter Test conditions Min. Typ. Max. Unit Err Reverse recovery energy - 52 µJ trr Reverse recovery time IF = 10 A, VR = 400 V, VGE = 15 V TJ = 175 °C (see Figure 29: " Test circuit for inductive load switching") di/dt = 1000 A/µs - 201 ns Qrr Reverse recovery charge - 1352 nC Irrm Reverse recovery current - 19 A dIrr/dt Peak rate of fall of reverse recovery current during tb - 405 A/µs Err Reverse recovery energy - 150 µJ |
Nº de peça semelhante - STGB10M65DF2 |
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Descrição semelhante - STGB10M65DF2 |
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