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74AHCT1G00DBVRE4 Folha de dados(PDF) 11 Page - Texas Instruments

Nome de Peças 74AHCT1G00DBVRE4
Descrição Electrónicos  Single 2-Input Positive-NAND Gate
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Fabricante Electrônico  TI1 [Texas Instruments]
Página de início  http://www.ti.com
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74AHCT1G00DBVRE4 Folha de dados(HTML) 11 Page - Texas Instruments

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SN74AHCT1G00
www.ti.com
SCLS316N – MARCH 1995 – REVISED MARCH 2015
12 Device and Documentation Support
12.1 Trademarks
All trademarks are the property of their respective owners.
12.2 Electrostatic Discharge Caution
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
12.3 Glossary
SLYZ022 — TI Glossary.
This glossary lists and explains terms, acronyms, and definitions.
13 Mechanical, Packaging, and Orderable Information
The following pages include mechanical, packaging, and orderable information. This information is the most
current data available for the designated devices. This data is subject to change without notice and revision of
this document. For browser-based versions of this data sheet, refer to the left-hand navigation.
Copyright © 1995–2015, Texas Instruments Incorporated
Submit Documentation Feedback
11
Product Folder Links: SN74AHCT1G00


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