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ACE7407A Folha de dados(PDF) 1 Page - ACE Technology Co., LTD. |
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ACE7407A Folha de dados(HTML) 1 Page - ACE Technology Co., LTD. |
1 / 7 page ACE7407A P-Channel Enhancement Mode MOSFET VER 1.1 1 Description The ACE7407A is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high-side switching, and low in-line power loss are needed in a very small outline surface mount package. Features • -20V/-3.4A, R DS (ON)= 100mΩ@VGS=-4.5V • -20V/-2.4A, R DS (ON)= 125mΩ@VGS=-2.5V • -20V/-1.7A, R DS (ON)= 150mΩ@VGS=-1.8V • -20V/-1.0A, R DS (ON)= 220mΩ@VGS=-1.25V • Super high density cell design for extremely low R DS (ON) • Exceptional on-resistance and maximum DC current capability Application • Power Management in Note book • Portable Equipment • Battery Powered System • DC/DC Converter • Load Switch • DSC • LCD Display inverter |
Nº de peça semelhante - ACE7407A |
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Descrição semelhante - ACE7407A |
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