SPI16N50C3 datasheet(2/13 Pages) INFINEON

Nome de Peças	SPI16N50C3

Descrição Electrónicos	Cool MOS??Power Transistor

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Fabricante Electrônico	INFINEON [Infineon Technologies AG]

Página de início	http://www.infineon.com

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2 / 13 page

2004-04-07

Rev. 2.1

Page 2

SPP16N50C3, SPB16N50C3

SPI16N50C3, SPA16N50C3

Maximum Ratings

Parameter

Symbol

Value

Unit

Drain Source voltage slope

VDS = 400 V, ID = 16 A, Tj = 125 °C

dv/dt

50

V/ns

Thermal Characteristics

Parameter

Symbol

Values

Unit

min.

typ.

max.

Thermal resistance, junction - case

RthJC

-

0.78

K/W

Thermal resistance, junction - case, FullPAK

RthJC_FP

-

3.7

Thermal resistance, junction - ambient, leaded

RthJA

-

62

Thermal resistance, junction - ambient, FullPAK

RthJA FP

-

80

Soldering temperature,

1.6 mm (0.063 in.) from case for 10s3)

Tsold

-

260

°C

Electrical Characteristics, at Tj=25°C unless otherwise specified

Parameter

Symbol

Conditions

Values

Unit

min.

typ.

max.

Drain-source breakdown voltage V(BR)DSS VGS=0V, ID=0.25mA

500

-

V

Drain-Source avalanche

breakdown voltage

V(BR)DS VGS=0V, ID=16A

-

600

-

Gate threshold voltage

VGS(th)

ID=675µA, VGS=VDS

2.1

3

3.9

Zero gate voltage drain current

IDSS

VDS=500V, VGS=0V,

Tj=25°C

Tj=150°C

-

0.1

-

1

100

µA

Gate-source leakage current

IGSS

VGS=20V, VDS=0V

-

100

nA

Drain-source on-state resistance RDS(on) VGS=10V, ID=10A

Tj=25°C

Tj=150°C

-

0.25

0.68

0.28

-

Ω

Gate input resistance

RG

f=1MHz, open drain

-

1.5

-

Nº de peça semelhante - SPI16N50C3

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SPI16N50C3 Folha de dados(PDF) 2 Page - Infineon Technologies AG

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