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CSD13383F4T Folha de dados(PDF) 1 Page - Texas Instruments

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Nome de Peças CSD13383F4T
Descrição Electrónicos  N-Channel FemtoFET MOSFET
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Fabricante Electrônico  TI1 [Texas Instruments]
Página de início  http://www.ti.com
Logo TI1 - Texas Instruments

CSD13383F4T Folha de dados(HTML) 1 Page - Texas Instruments

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An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
CSD13383F4
SLPS517A – DECEMBER 2014 – REVISED JANUARY 2016
CSD13383F4 12 V N-Channel FemtoFET™ MOSFET
1
1 Features
1
Low On-Resistance
Ultra Low Qg and Qgd
Ultra-Small Footprint (0402 Case Size)
1.0 mm × 0.6 mm
Low Profile
0.35 mm Height
Integrated ESD Protection Diode
Rated >2 kV HBM
Rated >2 kV CDM
Lead and Halogen Free
RoHS Compliant
2 Applications
Optimized for Load Switch Applications
Optimized for General Purpose Switching
Applications
Single-Cell Battery Applications
Handheld and Mobile Applications
3 Description
This 37 m
Ω, 12 V N-channel FemtoFET™ MOSFET
technology is designed and optimized to minimize the
footprint in many handheld and mobile applications.
This technology is capable of replacing standard
small signal MOSFETs while providing at least a 60%
reduction in footprint size.
.
.
Typical Part Dimensions
.
.
Product Summary
TA = 25°C
TYPICAL VALUE
UNIT
VDS
Drain-to-Source Voltage
12
V
Qg
Gate Charge Total (4.5 V)
2.0
nC
Qgd
Gate Charge Gate-to-Drain
0.6
nC
RDS(on)
Drain-to-Source On-Resistance
VGS = 2.5 V
53
m
VGS = 4.5 V
37
VGS(th)
Threshold Voltage
1.0
V
.
Ordering Information(1)
DEVICE
QTY
MEDIA
PACKAGE
SHIP
CSD13383F4
3000
7-Inch
Reel
Femto (0402) 1.0 mm ×
0.6 mm SMD Lead Less
Tape and
Reel
CSD13383F4T
250
(1) For all available packages, see the orderable addendum at
the end of the data sheet.
Absolute Maximum Ratings
TA = 25°C
VALUE
UNIT
VDS
Drain-to-Source Voltage
12
V
VGS
Gate-to-Source Voltage
±10
V
ID
Continuous Drain Current(1)
2.9
A
IDM
Pulsed Drain Current(1)(2)
27
A
IG
Continuous Gate Clamp Current
25
mA
Pulsed Gate Clamp Current(1)(2)
250
PD
Power Dissipation
500
mW
ESD
Rating
Human Body Model (HBM)
2
kV
Charged Device Model (CDM)
2
kV
TJ,
Tstg
Operating Junction Temperature
Storage Temperature
–55 to 150
°C
EAS
Avalanche Energy, single pulse ID = 6.7,
L = 0.1 mH, RG = 25 Ω
2.2
mJ
(1) Typical RθJA = 250°C/W.
(2) Pulse duration
≤100 μs, duty cycle ≤1%.
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