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CSD13383F4T Folha de dados(PDF) 1 Page - Texas Instruments |
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CSD13383F4T Folha de dados(HTML) 1 Page - Texas Instruments |
1 / 13 page D G S 0.35 mm Product Folder Sample & Buy Technical Documents Tools & Software Support & Community An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications, intellectual property matters and other important disclaimers. PRODUCTION DATA. CSD13383F4 SLPS517A – DECEMBER 2014 – REVISED JANUARY 2016 CSD13383F4 12 V N-Channel FemtoFET™ MOSFET 1 1 Features 1 • Low On-Resistance • Ultra Low Qg and Qgd • Ultra-Small Footprint (0402 Case Size) – 1.0 mm × 0.6 mm • Low Profile – 0.35 mm Height • Integrated ESD Protection Diode – Rated >2 kV HBM – Rated >2 kV CDM • Lead and Halogen Free • RoHS Compliant 2 Applications • Optimized for Load Switch Applications • Optimized for General Purpose Switching Applications • Single-Cell Battery Applications • Handheld and Mobile Applications 3 Description This 37 m Ω, 12 V N-channel FemtoFET™ MOSFET technology is designed and optimized to minimize the footprint in many handheld and mobile applications. This technology is capable of replacing standard small signal MOSFETs while providing at least a 60% reduction in footprint size. . . Typical Part Dimensions . . Product Summary TA = 25°C TYPICAL VALUE UNIT VDS Drain-to-Source Voltage 12 V Qg Gate Charge Total (4.5 V) 2.0 nC Qgd Gate Charge Gate-to-Drain 0.6 nC RDS(on) Drain-to-Source On-Resistance VGS = 2.5 V 53 m Ω VGS = 4.5 V 37 VGS(th) Threshold Voltage 1.0 V . Ordering Information(1) DEVICE QTY MEDIA PACKAGE SHIP CSD13383F4 3000 7-Inch Reel Femto (0402) 1.0 mm × 0.6 mm SMD Lead Less Tape and Reel CSD13383F4T 250 (1) For all available packages, see the orderable addendum at the end of the data sheet. Absolute Maximum Ratings TA = 25°C VALUE UNIT VDS Drain-to-Source Voltage 12 V VGS Gate-to-Source Voltage ±10 V ID Continuous Drain Current(1) 2.9 A IDM Pulsed Drain Current(1)(2) 27 A IG Continuous Gate Clamp Current 25 mA Pulsed Gate Clamp Current(1)(2) 250 PD Power Dissipation 500 mW ESD Rating Human Body Model (HBM) 2 kV Charged Device Model (CDM) 2 kV TJ, Tstg Operating Junction Temperature Storage Temperature –55 to 150 °C EAS Avalanche Energy, single pulse ID = 6.7, L = 0.1 mH, RG = 25 Ω 2.2 mJ (1) Typical RθJA = 250°C/W. (2) Pulse duration ≤100 μs, duty cycle ≤1%. Top View |
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