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CSD25402Q3A Folha de dados(PDF) 1 Page - Texas Instruments |
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CSD25402Q3A Folha de dados(HTML) 1 Page - Texas Instruments |
1 / 15 page -VGS - Gate-To-Source Voltage (V) 0 2 4 6 8 10 12 0 3 6 9 12 15 18 21 24 D007 TC = 25°C, I D = -10 A TC = 125°C, I D = -10 A Qg - Gate Charge (nC) 0 2 4 6 8 10 12 14 0 1 2 3 4 5 6 7 8 D004 ID = -10 A VDS = -10 V 1 S S S S S 5 G 6 D 7 D 8 D 4 3 2 Product Folder Sample & Buy Technical Documents Tools & Software Support & Community Reference Design CSD25402Q3A SLPS454B – DECEMBER 2013 – REVISED JANUARY 2016 CSD25402Q3A –20 V P-Channel NexFET™ Power MOSFET 1 Features Product Summary 1 • Ultra-Low Qg and Qgd TA = 25°C TYPICAL VALUE UNIT • Low Thermal Resistance VDS Drain-to-source voltage –20 V • Low RDS(on) Qg Gate charge total (–4.5 V) 7.5 nC Qgd Gate charge gate to drain 1.1 nC • Pb and Halogen Free VGS = –1.8 V 74 m Ω • RoHS Compliant RDS(on) Drain-to-source on resistance VGS = –2.5 V 13.3 m Ω • SON 3.3 mm × 3.3 mm Plastic Package VGS = –4.5 V 7.7 m Ω Vth Threshold voltage –0.9 V 2 Applications • DC-DC Converters Ordering Information(1) • Battery Management DEVICE QTY MEDIA PACKAGE SHIP • Load Switch CSD25402Q3A 2500 13-Inch Reel SON 3.3 mm × 3.3 Tape and mm Plastic Package Reel CSD25402Q3AT 250 7-Inch Reel • Battery Protection (1) For all available packages, see the orderable addendum at 3 Description the end of the data sheet. This –20-V, 7.7-m Ω NexFET™ power MOSFET is Absolute Maximum Ratings designed to minimize losses in power conversion load TA = 25°C VALUE UNIT management applications with a SON 3.3 mm × 3.3 mm package that offers an excellent thermal VDS Drain-to-source voltage –20 V performance for the size of the device. VGS Gate-to-source voltage +12 or –12 V Continuous drain current, TC = 25°C –76 A Top View ID Continuous drain current (package limit) –35 A Continuous drain current(1) –15 A IDM Pulsed drain current(2) –148 A Power dissipation(1) 2.8 PD W Power dissipation, TC = 25°C 69 TJ Operating junction temperature –55 to 150 °C Tstg Storage temperature –55 to 150 °C (1) Typical RθJA = 45°C/W on 1 inch 2 Cu (2 oz.) on 0.060 inch thick FR4 PCB. (2) Max RθJC = 2.3°C/W, pulse duration ≤100 μs, duty cycle ≤1% RDS(on) vs VGS Gate Charge 1 An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications, intellectual property matters and other important disclaimers. PRODUCTION DATA. |
Nº de peça semelhante - CSD25402Q3A_16 |
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Descrição semelhante - CSD25402Q3A_16 |
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