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CSD25402Q3A Folha de dados(PDF) 1 Page - Texas Instruments

Nome de Peças CSD25402Q3A
Descrição Electrónicos  20 V P-Channel NexFET Power MOSFET
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Fabricante Electrônico  TI1 [Texas Instruments]
Página de início  http://www.ti.com
Logo TI1 - Texas Instruments

CSD25402Q3A Folha de dados(HTML) 1 Page - Texas Instruments

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-VGS - Gate-To-Source Voltage (V)
0
2
4
6
8
10
12
0
3
6
9
12
15
18
21
24
D007
TC = 25°C, I D = -10 A
TC = 125°C, I D = -10 A
Qg - Gate Charge (nC)
0
2
4
6
8
10
12
14
0
1
2
3
4
5
6
7
8
D004
ID = -10 A
VDS = -10 V
1
S
S
S
S
S
5
G
6
D
7
D
8
D
4
3
2
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Design
CSD25402Q3A
SLPS454B – DECEMBER 2013 – REVISED JANUARY 2016
CSD25402Q3A –20 V P-Channel NexFET™ Power MOSFET
1 Features
Product Summary
1
Ultra-Low Qg and Qgd
TA = 25°C
TYPICAL VALUE
UNIT
Low Thermal Resistance
VDS
Drain-to-source voltage
–20
V
Low RDS(on)
Qg
Gate charge total (–4.5 V)
7.5
nC
Qgd
Gate charge gate to drain
1.1
nC
Pb and Halogen Free
VGS = –1.8 V
74
m
RoHS Compliant
RDS(on)
Drain-to-source on resistance
VGS = –2.5 V
13.3
m
SON 3.3 mm × 3.3 mm Plastic Package
VGS = –4.5 V
7.7
m
Vth
Threshold voltage
–0.9
V
2 Applications
DC-DC Converters
Ordering Information(1)
Battery Management
DEVICE
QTY
MEDIA
PACKAGE
SHIP
Load Switch
CSD25402Q3A
2500 13-Inch Reel
SON 3.3 mm × 3.3
Tape and
mm Plastic Package
Reel
CSD25402Q3AT
250
7-Inch Reel
Battery Protection
(1) For all available packages, see the orderable addendum at
3 Description
the end of the data sheet.
This –20-V, 7.7-m
Ω NexFET™ power MOSFET is
Absolute Maximum Ratings
designed to minimize losses in power conversion load
TA = 25°C
VALUE
UNIT
management applications with a SON 3.3 mm × 3.3
mm
package
that
offers
an
excellent
thermal
VDS
Drain-to-source voltage
–20
V
performance for the size of the device.
VGS
Gate-to-source voltage
+12 or –12
V
Continuous drain current, TC = 25°C
–76
A
Top View
ID
Continuous drain current (package limit)
–35
A
Continuous drain current(1)
–15
A
IDM
Pulsed drain current(2)
–148
A
Power dissipation(1)
2.8
PD
W
Power dissipation, TC = 25°C
69
TJ
Operating junction temperature
–55 to 150
°C
Tstg
Storage temperature
–55 to 150
°C
(1) Typical RθJA = 45°C/W on 1 inch
2 Cu (2 oz.) on 0.060 inch
thick FR4 PCB.
(2) Max RθJC = 2.3°C/W, pulse duration ≤100 μs, duty cycle ≤1%
RDS(on) vs VGS
Gate Charge
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.


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