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CSD25404Q3 Folha de dados(PDF) 3 Page - Texas Instruments

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Nome de Peças CSD25404Q3
Descrição Electrónicos  20 V P-Channel NexFET Power MOSFET
Download  13 Pages
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Fabricante Electrônico  TI1 [Texas Instruments]
Página de início  http://www.ti.com
Logo TI1 - Texas Instruments

CSD25404Q3 Folha de dados(HTML) 3 Page - Texas Instruments

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CSD25404Q3
www.ti.com
SLPS570 – NOVEMBER 2015
5 Specifications
5.1 Electrical Characteristics
(TA = 25°C unless otherwise stated)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
STATIC CHARACTERISTICS
BVDSS
Drain-to-source voltage
VGS = 0 V, ID = –250 μA
–20
V
IDSS
Drain-to-source leakage current
VGS = 0 V, VDS = –16 V
–1
μA
IGSS
Gate-to-source leakage current
VDS = 0 V, VGS = ±12 V
–100
nA
VGS(th)
Gate-to-source threshold voltage
VDS = VGS, ID = –250 μA
–0.65
–0.90
–1.15
V
VGS = –1.8 V, ID = –1 A
40
150
m
RDS(on)
Drain-to-source on resistance
VGS = –2.5 V, ID = –10 A
10.1
12.1
m
VGS = –4.5 V, ID = –10 A
5.5
6.5
m
gfs
Transconductance
VDS = –10 V, ID = –10 A
47
S
DYNAMIC CHARACTERISTICS
CISS
Input capacitance
1630
2120
pF
VGS = 0 V, VDS = –10 V,
COSS
Output capacitance
902
1170
pF
ƒ = 1 MHz
CRSS
Reverse transfer capacitance
52
68
pF
RG
Series gate resistance
0.8
2.4
Qg
Gate charge total (–4.5 V)
10.8
14.1
nC
Qgd
Gate charge gate to drain
2.2
nC
VDS = –10 V, ID = –10 A
Qgs
Gate charge gate to source
2.8
nC
Qg(th)
Gate charge at Vth
1.5
nC
QOSS
Output charge
VDS = –10 V, VGS = 0 V
9.0
nC
td(on)
Turn on delay time
13
ns
tr
Rise time
8
ns
VDS = –10 V, VGS = –4.5 V,
ID = –10 A , RG = 5 Ω
td(off)
Turn off delay time
35
ns
tf
Fall time
13
ns
DIODE CHARACTERISTICS
VSD
Diode forward voltage
IS = –10 A, VGS = 0 V
–0.8
–1
V
Qrr
Reverse recovery charge
20.5
nC
VDS = –10 V, IF = –10 A,
di/dt = 200 A/
μs
trr
Reverse recovery time
26
ns
5.2 Thermal Information
(TA = 25°C unless otherwise stated)
THERMAL METRIC
MIN
TYP
MAX
UNIT
RθJC
Junction-to-case thermal resistance(1)
1.3
°C/W
RθJA
Junction-to-ambient thermal resistance(1)(2)
55
°C/W
(1)
RθJC is determined with the device mounted on a 1 inch
2 (6.45 cm2), 2 oz. (0.071 mm thick) Cu pad on a 1.5 inch × 1.5 inch (3.81 cm ×
3.81 cm), 0.06 inch (1.52 mm) thick FR4 PCB. RθJC is specified by design, whereas RθJA is determined by the user’s board design.
(2)
Device mounted on FR4 material with 1 inch2 (6.45 cm2), 2 oz. (0.071 mm thick) Cu.
Copyright © 2015, Texas Instruments Incorporated
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