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CSD25404Q3 Folha de dados(PDF) 3 Page - Texas Instruments |
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CSD25404Q3 Folha de dados(HTML) 3 Page - Texas Instruments |
3 / 13 page CSD25404Q3 www.ti.com SLPS570 – NOVEMBER 2015 5 Specifications 5.1 Electrical Characteristics (TA = 25°C unless otherwise stated) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT STATIC CHARACTERISTICS BVDSS Drain-to-source voltage VGS = 0 V, ID = –250 μA –20 V IDSS Drain-to-source leakage current VGS = 0 V, VDS = –16 V –1 μA IGSS Gate-to-source leakage current VDS = 0 V, VGS = ±12 V –100 nA VGS(th) Gate-to-source threshold voltage VDS = VGS, ID = –250 μA –0.65 –0.90 –1.15 V VGS = –1.8 V, ID = –1 A 40 150 m Ω RDS(on) Drain-to-source on resistance VGS = –2.5 V, ID = –10 A 10.1 12.1 m Ω VGS = –4.5 V, ID = –10 A 5.5 6.5 m Ω gfs Transconductance VDS = –10 V, ID = –10 A 47 S DYNAMIC CHARACTERISTICS CISS Input capacitance 1630 2120 pF VGS = 0 V, VDS = –10 V, COSS Output capacitance 902 1170 pF ƒ = 1 MHz CRSS Reverse transfer capacitance 52 68 pF RG Series gate resistance 0.8 2.4 Ω Qg Gate charge total (–4.5 V) 10.8 14.1 nC Qgd Gate charge gate to drain 2.2 nC VDS = –10 V, ID = –10 A Qgs Gate charge gate to source 2.8 nC Qg(th) Gate charge at Vth 1.5 nC QOSS Output charge VDS = –10 V, VGS = 0 V 9.0 nC td(on) Turn on delay time 13 ns tr Rise time 8 ns VDS = –10 V, VGS = –4.5 V, ID = –10 A , RG = 5 Ω td(off) Turn off delay time 35 ns tf Fall time 13 ns DIODE CHARACTERISTICS VSD Diode forward voltage IS = –10 A, VGS = 0 V –0.8 –1 V Qrr Reverse recovery charge 20.5 nC VDS = –10 V, IF = –10 A, di/dt = 200 A/ μs trr Reverse recovery time 26 ns 5.2 Thermal Information (TA = 25°C unless otherwise stated) THERMAL METRIC MIN TYP MAX UNIT RθJC Junction-to-case thermal resistance(1) 1.3 °C/W RθJA Junction-to-ambient thermal resistance(1)(2) 55 °C/W (1) RθJC is determined with the device mounted on a 1 inch 2 (6.45 cm2), 2 oz. (0.071 mm thick) Cu pad on a 1.5 inch × 1.5 inch (3.81 cm × 3.81 cm), 0.06 inch (1.52 mm) thick FR4 PCB. RθJC is specified by design, whereas RθJA is determined by the user’s board design. (2) Device mounted on FR4 material with 1 inch2 (6.45 cm2), 2 oz. (0.071 mm thick) Cu. Copyright © 2015, Texas Instruments Incorporated Submit Documentation Feedback 3 Product Folder Links: CSD25404Q3 |
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