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CSD16401Q5 Folha de dados(PDF) 1 Page - Texas Instruments |
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CSD16401Q5 Folha de dados(HTML) 1 Page - Texas Instruments |
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1 / 13 page  VGS - Gate-to-Source Voltage (V) 0 2 4 6 8 10 12 0 1 2 3 4 5 6 D007 TC = 25°C, I D = 40 A TC = 125°C, I D = 40 A Qg - Gate Charge (nC) 0 10 20 30 40 50 60 0 2 4 6 8 10 12 D004 ID = 40 A VDS = 12.5 V 1 D 2 D 3 D 4 D D 5 G 6 S 7 S 8 S P0094-01 Product Folder Sample & Buy Technical Documents Tools & Software Support & Community Reference Design CSD16401Q5 SLPS200B – AUGUST 2009 – REVISED SEPTEMBER 2015 CSD16401Q5 25-V N-Channel NexFET™ Power MOSFET 1 Features Product Summary 1 • Ultralow Qg and Qgd TA = 25°C VALUE UNIT • Low Thermal Resistance VDS Drain-to-Source voltage 25 V • Avalanche Rated Qg Gate Charge, Total (4.5 V) 21 nC Qgd Gate Charge, Gate-to-Drain 5.2 nC • SON 5-mm × 6-mm Plastic Package VGS = 4.5 V 1.8 m Ω Drain-to-Source RDS(on) On Resistance 2 Applications VGS = 10 V 1.3 m Ω VGS(th) Threshold Voltage 1.5 V • Point-of-Load Synchronous Buck Converter for Applications in Networking, Telecom and Device Information(1) Computing Systems DEVICE PACKAGE MEDIA QTY SHIP • Optimized for Synchronous FET Applications SON 13-inch Tape and CSD16401Q5 5 mm × 6 mm 2500 Reel Reel 3 Description Plastic Package This 25-V, 1.3-m Ω, 5-mm × 6-mm SON NexFET™ (1) For all available packages, see the orderable addendum at power MOSFET has been designed to minimize the end of the data sheet. losses in power conversion applications. Absolute Maximum Ratings Top View TA = 25°C VALUE UNIT VDS Drain-to-Source Voltage 25 V VGS Gate-to-Source Voltage –12 to 16 V Continuous Drain Current (Package 100 Limited) ID Continuous Drain Current (Silicon A 261 Limited), TC = 25°C Continuous Drain Current(1) 38 IDM Pulsed Drain Current, TA = 25°C (2) 240 A Power Dissipation(1) 3.1 PD W Power Dissipation, , TC = 25°C 156 TJ, Operating Junction and –55 to 150 °C Tstg Storage Temperature Added text for spacing Avalanche Energy, Single Pulse EAS 500 mJ ID = 100 A, L = 0.1 mH, RG = 25 Ω Added text for spacing (1) RθJA = 40°C/W on 1-in 2 (6.45-cm2) Cu [2 oz. (0.071-mm Added text for spacing thick)] on 0.060-inch (1.52-mm) thick FR4 PCB. (2) Max RθJC = 0.8°C/W, pulse duration ≤100 μs, duty cycle ≤1% RDS(ON) vs VGS Gate Charge 1 An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications, intellectual property matters and other important disclaimers. PRODUCTION DATA. |
Nº de peça semelhante - CSD16401Q5 |
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Descrição semelhante - CSD16401Q5 |
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