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CSD16415Q5 Folha de dados(PDF) 1 Page - Texas Instruments |
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CSD16415Q5 Folha de dados(HTML) 1 Page - Texas Instruments |
1 / 16 page Qg - Gate Charge (nC) 0 10 20 30 40 50 60 0 2 4 6 8 10 12 D004 ID = 40 A VDS = 12.5 V VGS - Gate-to-Source Voltage (V) 0 1 2 3 4 5 6 7 8 9 10 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 D007 TC = 25°C, I D = 40 A TC = 125°C, I D = 40 A 1 D 2 D 3 D 4 D D 5 G 6 S 7 S 8 S P0094-01 Product Folder Sample & Buy Technical Documents Tools & Software Support & Community Reference Design CSD16415Q5 SLPS259A – DECEMBER 2011 – REVISED SEPTEMBER 2015 CSD16415Q5 25-V N-Channel NexFET™ Power MOSFET Added text for spacing 1 Features 1 • Ultralow Qg and Qgd Product Summary • Very Low On-Resistance TA = 25°C VALUE UNIT • Low Thermal Resistance VDS Drain-to-Source Voltage 25 V Qg Gate Charge, Total (4.5 V) 21 nC • Avalanche Rated Qgd Gate Charge, Gate-to-Drain 5.2 nC • Pb-Free Terminal Plating VGS = 4.5 V 1.5 m Ω Drain-to-Source On • RoHS Compliant RDS(on) Resistance VGS = 10 V 0.99 m Ω • Halogen-Free VGS(th) Threshold Voltage 1.5 V 2 Applications Device Information(1) • Point-of-Load Synchronous Buck Converter for DEVICE PACKAGE MEDIA QTY SHIP Applications in Networking, Telecom, and SON 13-inch Tape and CSD16415Q5 5-mm × 6-mm 2500 Computing Systems Reel Reel Plastic Package • Optimized for Synchronous FET Applications (1) For all available packages, see the orderable addendum at the end of the data sheet. 3 Description This 25 V, 1.3 m Ω, 5 x 6 mm SON NexFET™ power Absolute Maximum Ratings MOSFET has been designed to minimize losses in TA = 25°C VALUE UNIT power conversion applications. VDS Drain-to-Source Voltage 25 V VGS Gate-to-Source Voltage –12 to 16 V Top View Continuous Drain Current (Package 100 Limited) ID Continuous Drain Current (Silicon A 261 Limited), TC = 25°C (1) Continuous Drain Current(1) 38 IDM Pulsed Drain Current, TA = 25°C (2) 200 A Power dissipation(1) 3.2 PD W Power Dissipation, , TC = 25°C 156 TJ, Operating Junction and –55 to 150 °C Tstg Storage Temperature Avalanche Energy, Single-Pulse EAS 500 mJ ID = 100 A, L = 0.1 mH, RG = 25 Ω (1) RθJA = 40°C/W on 1 in 2 (6.45 cm2) Cu [2 oz. (0.071 mm Added text for spacing thick)] on 0.060 inch (1.52 mm) thick FR4 PCB. Added text for spacing (2) Max RθJC = 0.8°C/W, pulse duration ≤100 μs, duty cycle ≤1% RDS(ON) vs VGS Gate Charge 1 An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications, intellectual property matters and other important disclaimers. PRODUCTION DATA. |
Nº de peça semelhante - CSD16415Q5_15 |
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Descrição semelhante - CSD16415Q5_15 |
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