1SV314

2014-03-01

1

TOSHIBA Diode Silicon Epitaxial Planar Type

1SV314

VCO for UHF Band Radio

High Capacitance Ratio

Low Series Resistance

Useful for Small Size Tuner

CHARACTERISTIC

SYMBOL

RATING

UNIT

Reverse Voltage

10

V

Junction Temperature

125

°C

Storage Temperature Range

−55 to 125

°C

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the

absolute maximum ratings.

Please design the appropriate reliability upon reviewing the

Toshiba Semiconductor Reliability Handbook (“Handling

Precautions”/“Derating Concept and Methods”) and individual

reliability data (i.e. reliability test report and estimated failure rate, etc).

CHARACTERISTIC

SYMBOL

TEST CONDITION

MIN

TYP.

MAX

UNIT

Reverse Voltage

10

—

—

V

Reverse Current

—

—

3

nA

Capacitance

7.3

—

8.4

pF

Capacitance

2.75

—

3.4

pF

Capacitance Ratio

—

2.4

2.5

—

—

Series Resistance

—

0.35

0.45

Ω

Marking

Unit: mm

JEDEC

—

JEITA

—

TOSHIBA

1−1G1A

Weight:0.0014g (typ.)

Start of commercial production

1998-06