ST18N10D datasheet(2/6 Pages) STANSON

Nome de Peças	ST18N10D

Descrição Electrónicos	TO-252 Package design

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Fabricante Electrônico	STANSON [Stanson Technology]

Página de início	http://www.stansontech.com

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ST18N10D

N Channel Enhancement Mode MOSFET

18.0A

STANSON TECHNOLOGY

120 Bentley Square, Mountain View, Ca 94040 USA

www.stansontech.com

ST18N10D 2009. V1

ABSOULTE MAXIMUM RATINGS (Ta = 25℃ Unless otherwise noted )

Parameter

Symbol

Typical

Unit

Drain-Source Voltage

VDSS

100

V

Gate-Source Voltage

VGSS

±20

V

Continuous Drain Current

(TJ=150℃)

TA=25℃

TA=100℃

ID

18.0

12.0

A

Pulsed Drain Current

IDM

65

A

Continuous Source Current (Diode Conduction)

IS

16

A

Power Dissipation

TA=25℃

PD

79

W

Operation Junction Temperature

TJ

150

℃

Storgae Temperature Range

TSTG

-55/150

℃

Thermal Resistance-Junction to Ambient

RθJA

110

℃

/W

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ST18N10D Folha de dados(PDF) 2 Page - Stanson Technology

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