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BA158 Folha de dados(PDF) 1 Page - Diotec Semiconductor |
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BA158 Folha de dados(HTML) 1 Page - Diotec Semiconductor |
1 / 2 page 1) Measured at f = 1 Mhz, V R = 4.0 V – Gemessen bei f = 1 Mhz, VR = 4.0 V 2) Valid, if leads are kept at ambient temperature at a distance of 10 mm from case Gültig, wenn die Anschlußdrähte in 10 mm Abstand von Gehäuse auf Umgebungstemperatur gehalten werden 104 28.02.2002 BA 157 … BA 159 Fast Silicon Rectifiers Schnelle Silizium Gleichrichter Nominal current – Nennstrom 1 A Repetitive peak reverse voltage 400…1000 V Periodische Spitzensperrspannung Plastic case DO-41 Kunststoffgehäuse DO-204AL Weight approx. – Gewicht ca. 0.4 g Plastic material has UL classification 94V-0 Gehäusematerial UL94V-0 klassifiziert Dimensions / Maße in mm Standard packaging taped in ammo pack see page 16 Standard Lieferform gegurtet in Ammo-Pack siehe Seite 16 Maximum ratings and Characteristics Grenz- und Kennwerte Type Typ Repetitive peak reverse volt. Period. Spitzensperrspanng. V RRM [V] Surge peak reverse volt. Stoßspitzensperrspanng. V RSM [V] Typ. junction capacitance Typ. Sperrschichtkapazität C tot [pF] 1) BA 157 400 400 2.2 BA 158 600 600 2.0 BA 159 1000 1000 1.8 Max. average forward rectified current, R-load T A = 50 /CI FAV 1 A 2) Dauergrenzstrom in Einwegschaltung mit R-Last Repetitive peak forward current f > 15 Hz I FRM 10 A 2) Periodischer Spitzenstrom Peak forward surge current, 50 Hz half sine-wave T A = 25 /CI FSM 35 A Stoßstrom für eine 50 Hz Sinus-Halbwelle Rating for fusing, Grenzlastintegral, t < 10 ms T A = 25 /Ci2t6 A2s Operating junction temperature – Sperrschichttemperatur T j – 50…+150 /C Storage temperature – Lagerungstemperatur T S – 50…+175 /C |
Nº de peça semelhante - BA158 |
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Descrição semelhante - BA158 |
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