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BCW61B Folha de dados(PDF) 1 Page - Diotec Semiconductor

Nome de Peças BCW61B
Descrição Electrónicos  Surface mount Si-Epitaxial PlanarTransistors
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Fabricante Electrônico  DIOTEC [Diotec Semiconductor]
Página de início  http://www.diotec.com
Logo DIOTEC - Diotec Semiconductor

BCW61B Folha de dados(HTML) 1 Page - Diotec Semiconductor

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1) Mounted on P.C. board with 3 mm2 copper pad at each terminal
Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluß
2) Tested with pulses t
p = 300
:s, duty cycle # 2% – Gemessen mit Impulsen t
p = 300
:s, Schaltverhältnis # 2%
01.11.2003
1.1
2.9 ±0.1
0.4
1
2
3
Type
Code
1.9
BCW 61
General Purpose Transistors
PNP
Surface mount Si-Epitaxial PlanarTransistors
Si-Epitaxial PlanarTransistoren für die Oberflächenmontage
PNP
Power dissipation – Verlustleistung
250 mW
Plastic case
SOT-23
Kunststoffgehäuse
(TO-236)
Weight approx. – Gewicht ca.
0.01 g
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
Dimensions / Maße in mm
1 = B
2 = E
3 = C
Standard packaging taped and reeled
Standard Lieferform gegurtet auf Rolle
Maximum ratings (T
A = 25
/C)
Grenzwerte (T
A = 25
/C)
BCW 61
Collector-Emitter-voltage
B open
- V
CE0
32 V
Collector-Base-voltage
E open
- V
CB0
32 V
Emitter-Base-voltage
C open
- V
EB0
5 V
Power dissipation – Verlustleistung
P
tot
250 mW 1)
Collector current – Kollektorstrom (DC)
- I
C
100 mA
Peak Collector current – Kollektor-Spitzenstrom
- I
CM
200 mA
Peak Base current – Basis-Spitzenstrom
- I
BM
200 mA
Junction temperature – Sperrschichttemperatur
T
j
150
/C
Storage temperature – Lagerungstemperatur
T
S
- 65…+ 150
/C
Characteristics (T
j = 25
/C)
Kennwerte (T
j = 25
/C)
Min.
Typ.
Max.
Collector-Base cutoff current – Kollektorreststrom
I
E = 0, - VCB = 32 V
- I
CB0
20 nA
I
E = 0, - VCB = 32 V, Tj = 150
/C- I
CB0
20
:A
Emitter-Base cutoff current – Emitterreststrom
I
C = 0, - VEB = 4 V
- I
EB0
20 nA
Collector saturation volt. – Kollektor-Sättigungsspg. 2)
- I
C = 10 mA, - IB = 0.25 mA
- V
CEsat
60 mV
250 mV
- I
C = 50 mA, - IB = 1.25 mA
- V
CEsat
120 mV
550 mV


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