MTB020N03KJ3 datasheet(3/9 Pages) CYSTEKEC

Nome de Peças	MTB020N03KJ3

Descrição Electrónicos	N-Channel Enhancement Mode Power MOSFET

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Fabricante Electrônico	CYSTEKEC [Cystech Electonics Corp.]

Página de início	http://www.cystekec.com

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3 / 9 page

CYStech Electronics Corp.

Spec. No. : C143J3

Issued Date : 2015.12.15

Revised Date : 2016.02.22

Page No. : 3/9

MTB020N03KJ3

CYStek Product Specification

Characteristics (Tc=25

C, unless otherwise specified)

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

Static

BVDSS

30

-

V

VGS=0V, ID=250μA

VGS(th)

1

-

2.5

VDS =VGS, ID=250μA

IGSS

-

±10

μA

VGS=±16V, VDS=0V

IDSS

-

1

VDS =30V, VGS =0V

-

25

VDS =30V, VGS =0V, TJ=70C

RDS(ON) *1

-

13

17

mΩ

VGS =10V, ID=20A

-

18

24

VGS =4.5V, ID=10A

-

21

28

VGS =4V, ID=10A

GFS

*1

-

3.5

-

S

VDS =10V, ID=3A

Dynamic

Qg

*1, 2

-

12

-

nC

VDS=15V, ID=20A, VGS=10V

Qgs *1, 2

-

2.2

-

Qgd *1, 2

-

3.4

-

td(ON) *1, 2

-

6.4

-

ns

VDS=15V, ID=1A, VGS=10V, RG=6Ω

tr

*1, 2

-

17.2

-

td(OFF) *1, 2

-

30.8

-

tf

*1, 2

-

10.8

-

Ciss

-

440

-

pF

VGS=0V, VDS=25V, f=1MHz

Coss

-

61.7

-

Crss

-

46

-

Source-Drain Diode

VSD *1

-

0.91

1.2

V

IS=15A, VGS=0V

trr

-

5.6

-

ns

IF=20A, dIF/dt=100A/μs

Qrr

-

1.7

-

nC

Note : *1.Pulse Test : Pulse Width 300μs, Duty Cycle2%

*2.Independent of operating temperature

*3.Pulse width limited by maximum junction temperature.

Recommended soldering footprint

Nº de peça semelhante - MTB020N03KJ3

Fabricante Electrônico	Nome de Peças	Folha de dados	Descrição Electrónicos
Cystech Electonics Corp...	MTB020N03KL3	477Kb / 9P	30V N-channel Enhancement Mode MOSFET
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