MMBD914 datasheet(1/3 Pages) YEASHIN

Nome de Peças	MMBD914

Descrição Electrónicos	High?뭆peed Switching Diode

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DATA SHEET

SEMICONDUCTOR

http://www.yeashin.com

1

REV.02 20120305

MMBD914

High−Speed Switching

Diode

1

ANODE

3

CATHODE

Device

Package

Shipping†

ORDERING INFORMATION

MMBD914

SOT−23

3000/Tape & Reel

SOT–23 (TO–236AB)

1

2

3

5D

5D = Device Code

Symbol

Value

Unit

Reverse Voltage

VR

100

Vdc

Forward Current

IF

200

mAdc

Peak Forward Surge Current

IFM(surge)

500

mAdc

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Total Device Dissipation

FR–5 Board (Note 1.)

TA = 25°C

Derate above 25

°C

PD

225

1.8

mW

mW/

°C

Thermal Resistance,

Junction to Ambient

RqJA

556

°C/W

Total Device Dissipation

Alumina Substrate (Note 2.)

TA = 25°C

Derate above 25

°C

PD

300

2.4

mW

mW/

°C

Thermal Resistance,

Junction to Ambient

RqJA

417

°C/W

Junction and Storage

Temperature Range

TJ,Tstg

–55 to

+150

°C

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

Reverse Breakdown Voltage

(IR = 100 mAdc)

V(BR)

100

–

Vdc

Reverse Voltage Leakage Current

(VR = 20 Vdc)

(VR = 75 Vdc)

IR

–

25

5.0

nAdc

mAdc

Diode Capacitance

(VR = 0, f = 1.0 MHz)

CT

–

4.0

pF

Forward Voltage

(IF = 10 mAdc)

VF

–

1.0

Vdc

Reverse Recovery Time

(IF = IR = 10 mAdc) (Figure 1)

trr

–

4.0

ns

1. FR–5 = 1.0

0.75 0.062 in.

2. Alumina = 0.4

0.3 0.024 in. 99.5% alumina.

Rating

MAXIMUM RATINGS

Features

• Pb−Free Package May be Available. The G−Suffix Denotes a

Pb−Free Lead Finish

H

Nº de peça semelhante - MMBD914

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