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BC637 Folha de dados(PDF) 1 Page - Nanjing International Group Co |
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BC637 Folha de dados(HTML) 1 Page - Nanjing International Group Co |
1 / 3 page BC635 / BC637 / BC639 NPN Silicon Epitaxial Planar Transistor Medium Power Transistors for driver stages of audio / video amplifiers Absolute Maximum Ratings (Ta = 25 OC) Parameter Symbol Value Unit Collector Base Voltage BC635 BC637 BC639 VCBO 45 60 100 V Collector Emitter Voltage BC635 BC637 BC639 VCEO 45 60 80 V Emitter Base Voltage VEBO 5 V Collector Current IC 1 A Peak Collector Current ICM 1.5 A Base Current IB 100 mA Peak Base Current IBM 200 mA Power Dissipation Ptot 830 mW Junction Temperature Tj 150 O C Storage Temperature Range TS - 55 to + 150 O C 1.Emitter 2.Collector 3.Base TO-92 Plastic Package Weight approx. 0.19g |
Nº de peça semelhante - BC637 |
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Descrição semelhante - BC637 |
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