BTA1505E3 datasheet(2/6 Pages) CYSTEKEC

Nome de Peças	BTA1505E3

Descrição Electrónicos	PNP Epitaxial Planar Transistor

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Fabricante Electrônico	CYSTEKEC [Cystech Electonics Corp.]

Página de início	http://www.cystekec.com

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CYStech Electronics Corp.

Spec. No. : C655E3

Issued Date : 2016.01.28

Revised Date :

Page No. : 2/6

BTA1505E3

CYStek Product Specification

Absolute Maximum Ratings (Ta=25°C)

Parameter

Symbol

Limits

Unit

Collector-Base Voltage

VCBO

-150

Collector-Emitter Voltage

VCEO

-150

Emitter-Base Voltage

VEBO

-5

V

Collector Current (DC)

IC

-5

Collector Current (Pulse)

ICP

-10

(Note 1)

A

Power Dissipation @ TA=25°C

2

Power Dissipation @ TC=25°C

PD

20

W

Thermal Resistance, Junction to Ambient

RθJA

62.5

Thermal Resistance, Junction to Case

RθJC

6.2

°C/W

Opeearting Junction Temperature Range

Tj

-55~+150

Storage Temperature Range

Tstg

-55~+150

°C

Note : 1. Single Pulse Pw≦350μs, Duty≦2%.

Characteristics (Ta=25°C)

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

BVCEO

-150

-

IC=-1mA, IB=0

BVCBO

-150

-

V

IC=-100μA, IE=0

ICBO

-

-100

nA

VCB=-150V, IE=0

ICEO

-

-1

μA

VCE=-150V, IB=0

IEBO

-

-2

mA

VEB=-5V, IC=0

-

-1.2

IC=-2A, IB=-2mA

-

-1.5

IC=-3A, IB=-12mA

*VCE(sat)

-

-2.5

IC=-4A, IB=-20mA

*VBE(sat)

-

-2.3

IC=-3A, IB=-12mA

*VBE(on)

-

-2.5

V

VCE=-3V, IC=-3A

*hFE1

1000

-

VCE=-3V, IC=-500mA

*hFE2

1000

-

VCE=-3V, IC=-1A

*hFE3

1000

-

VCE=-3V, IC=-3A

VFEC

-

-2

V

IC=-4A

Cob

-

200

pF

VCB=-10V, IE=0A, f=1MHz

*Pulse Test : Pulse Width

≤380μs, Duty Cycle≤2%

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