MTB020N06KH8-0-T6-G datasheet(6/10 Pages) CYSTEKEC

Nome de Peças	MTB020N06KH8-0-T6-G

Descrição Electrónicos	N-Channel Enhancement Mode Power MOSFET

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Fabricante Electrônico	CYSTEKEC [Cystech Electonics Corp.]

Página de início	http://www.cystekec.com

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6 / 10 page

CYStech Electronics Corp.

Spec. No. : C103H8

Issued Date : 2016.04.20

Revised Date :

Page No. : 6/ 10

MTB020N06KH8

CYStek Product Specification

Typical Characteristics(Cont.)

Capacitance vs Drain-to-Source Voltage

10

100

1000

10000

0

5

10

15

20

25

30

VDS, Drain-Source Voltage(V)

C oss

Ciss

Crss

f=1MHz

Threshold Voltage vs Junction Tempearture

0.4

0.6

0.8

1.0

1.2

1.4

-75 -50 -25

0

25 50 75 100 125 150 175 200

Tj, Junction Temperature(°C)

ID=250μA

ID=1mA

Forward Transfer Admittance vs Drain Current

0.01

0.1

1

10

100

0.001

0.01

0.1

1

10

100

ID, Drain Current(A)

VDS=10V

Pulsed

Ta=25°C

Gate Charge Characteristics

0

2

4

6

8

10

0

2

4

6

8

1012

14

1618

20

Qg, Total Gate Charge(nC)

ID=8A

VDS=48V

VDS=30V

Maximum Safe Operating Area

0.1

1

10

100

1000

0.1

1

10

100

VDS, Drain-Source Voltage(V)

DC

100ms

10ms

100

μs

1ms

RDS(ON)

Limited

TC=25°C, Tj(max)=175°C

VGS=10V,RθJC=4.5°C/W

Single Pulse

Maximum Drain Current vs Case Temperature

0

5

10

15

20

25

30

35

40

45

50

25

50

75

100

125

150

175

200

TC, Case Temperature(°C)

Tj(max)=175°C,RθJC=2.1°C/W,

VGS=10V, Single Pulse

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MTB020N06KH8-0-T6-G Folha de dados(PDF) 6 Page - Cystech Electonics Corp.

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