MTB080P06Q8-0-T3-G datasheet(1/9 Pages) CYSTEKEC

Nome de Peças	MTB080P06Q8-0-T3-G

Descrição Electrónicos	P-Channel Enhancement Mode Power MOSFET

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Fabricante Electrônico	CYSTEKEC [Cystech Electonics Corp.]

Página de início	http://www.cystekec.com

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CYStech Electronics Corp.

Spec. No. : C069Q8

Issued Date : 2016.01.29

Revised Date :

Page No. : 1/9

MTB080P06Q8

CYStek Product Specification

P-Channel Enhancement Mode Power MOSFET

MTB080P06Q8 BVDSS

-60V

ID@ VGS=-10V, TA=25°C

-4A

RDSON @VGS=-10V, ID=-4A

80.3mΩ(typ.)

RDSON @VGS=-4.5V, ID=-3A

108mΩ(typ.)

Features

• Simple drive requirement

• Low on-resistance

• Fast switching speed

• Pb-free lead plating package

Equivalent Circuit

Outline

Ordering Information

Device

Package

Shipping

MTB080P06Q8-0-T3-G

SOP-8

(Pb-free lead plating & halogen-free package)

2500 pcs / Tape & Reel

MTB080P06Q8

SOP-8

G：Gate

S：Source

D：Drain

Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and

green compound products

Packing spec, T3 : 2500 pcs / tape & reel,13” reel

Product rank, zero for no rank products

Product name

Nº de peça semelhante - MTB080P06Q8-0-T3-G

Fabricante Electrônico	Nome de Peças	Folha de dados	Descrição Electrónicos
SHENZHEN DOINGTER SEMIC...	MTB080P06Q8	1Mb / 4P	P-Channel MOSFET uses advanced trench technology

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MTB080P06Q8-0-T3-G Folha de dados(PDF) 1 Page - Cystech Electonics Corp.

MTB080P06Q8-0-T3-G Folha de dados(HTML) 1 Page - Cystech Electonics Corp.

Nº de peça semelhante - MTB080P06Q8-0-T3-G

Descrição semelhante - MTB080P06Q8-0-T3-G

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