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2SK1010 Folha de dados(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SK1010 Folha de dados(HTML) 2 Page - Inchange Semiconductor Company Limited |
2 / 2 page INCHANGE Semiconductor isc Product Specification isc website:www.iscsemi.cn isc & iscsemi is registered trademark 2 isc N-Channel Mosfet Transistor 2SK1010 ·ELECTRICAL CHARACTERISTICS (T C=25℃) SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID= 1mA 500 V VGS(th) Gate Threshold Voltage VDS= VGS; ID=1mA 2.5 3.5 5.0 V RDS(on) Drain-Source On-stage Resistance VGS=10V; ID= 3A 1.2 1.6 Ω IGSS Gate Source Leakage Current VGS= ±30V;VDS= 0 ±100 nA IDSS Zero Gate Voltage Drain Current VDS= 500V; VGS= 0 500 uA VSD Forward On-Voltage IS=6A; VGS=0 1.0 1.5 V tr Rise time VGS=10V;ID=6A; RL=25Ω 50 80 ns ton Turn-on time 70 110 ns tf Fall time 50 80 ns toff Turn-off time 130 200 ns PDF pdfFactory Pro www.fineprint.cn |
Nº de peça semelhante - 2SK1010 |
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Descrição semelhante - 2SK1010 |
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