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AMIS-30663 Folha de dados(PDF) 5 Page - ON Semiconductor

Nome de Peças AMIS-30663
Descrição Electrónicos  High Speed CAN Transceiver
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Fabricante Electrônico  ONSEMI [ON Semiconductor]
Página de início  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

AMIS-30663 Folha de dados(HTML) 5 Page - ON Semiconductor

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AMIS−30663
http://onsemi.com
5
Table 5. Absolute Maximum Ratings
Symbol
Parameter
Conditions
Min.
Max.
Unit
VCC
Supply voltage
−0.3
+7
V
V33
I/O interface voltage
−0.3
+7
V
VCANH
DC voltage at pin CANH
0 < VCC < 5.25 V; no time limit
−45
+45
V
VCANL
DC voltage at pin CANL
0 < VCC < 5.25 V; no time limit
−45
+45
V
VTxD
DC voltage at pin TxD
−0.3
VCC + 0.3
V
VRxD
DC voltage at pin RxD
−0.3
VCC + 0.3
V
VREF
DC voltage at pin VREF
−0.3
VCC + 0.3
V
Vtran(CANH)
Transient voltage at pin CANH
(Note 2)
−150
+150
V
Vtran(CANL)
Transient voltage at pin CANL
(Note 2)
−150
+150
V
Vtran(VREF)
Transient voltage at pin VREF
(Note 2)
−150
+150
V
Vesd(CANL/CANH)
Electrostatic discharge voltage at
CANH and CANL pin
(Note 3)
(Note 6)
−8
−500
+8
+500
kV
V
Vesd
Electrostatic discharge voltage at all
other pins
(Note 4)
(Note 6)
−4
−250
+ 4
+250
kV
V
Latch−up
Static latch−up at all pins
(Note 5)
100
mA
Tstg
Storage temperature
−55
+155
°C
Tamb
Ambient temperature
−40
+125
°C
Tjunc
Maximum junction temperature
−40
+150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
2. Applied transient waveforms in accordance with “ISO 7637 part 3”, test pulses 1, 2, 3a and 3b (see Figure 4).
3. Standardized human body model system ESD pulses in accordance to IEC 1000.4.2.
4. Standardized human body model ESD pulses in accordance to MIL883 method 3015. Supply pin 8 is ±4 kV.
5. Static latch−up immunity: static latch−up protection level when tested according to EIA/JESD78.
6. Standardized charged device model ESD pulses when tested according to EOS/ESD DS5.3−1993.
Table 6. Thermal Characteristics
Symbol
Parameter
Conditions
Value
Unit
Rth(vj−a)
Thermal resistance from junction to ambient in SO8 package
In free air
145
K/W
Rth(vj−s)
Thermal resistance from junction to substrate of bare die
In free air
45
K/W
Table 7. DC Characteristics
(VCC = 4.75 to 5.25 V; V33 = 2.9 V to 3.6 V; Tjunc = −40 to +150°C; RLT = 60 W unless specified otherwise.)
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
Supply (pin VCC and pin V33)
ICC
Supply current
Dominant;
VTXD = 0 V
Recessive;
VTXD = VCC
45
4
65
8
mA
I33
I/O interface current
V33 = 3.3 V;
CL = 20 pF; recessive
1
mA
I33
I/O interface current (Note 7)
V33 = 3.3 V;
CL = 20 pF; 1 Mbps
170
mA
Transmitter Data Input (pin TxD)
VIH
HIGH−level input voltage
Output recessive
2.0
VCC
V
VIL
LOW−level input voltage
Output dominant
−0.3
+0.8
V
IIH
HIGH−level input current
VTxD = V33
−1
0
+1
mA
IIL
LOW−level input current
VTxD = 0 V
−50
−200
−300
mA
7. Not tested on ATE.


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