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AMIS-30663 Folha de dados(PDF) 5 Page - ON Semiconductor |
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AMIS-30663 Folha de dados(HTML) 5 Page - ON Semiconductor |
5 / 11 page AMIS−30663 http://onsemi.com 5 Table 5. Absolute Maximum Ratings Symbol Parameter Conditions Min. Max. Unit VCC Supply voltage −0.3 +7 V V33 I/O interface voltage −0.3 +7 V VCANH DC voltage at pin CANH 0 < VCC < 5.25 V; no time limit −45 +45 V VCANL DC voltage at pin CANL 0 < VCC < 5.25 V; no time limit −45 +45 V VTxD DC voltage at pin TxD −0.3 VCC + 0.3 V VRxD DC voltage at pin RxD −0.3 VCC + 0.3 V VREF DC voltage at pin VREF −0.3 VCC + 0.3 V Vtran(CANH) Transient voltage at pin CANH (Note 2) −150 +150 V Vtran(CANL) Transient voltage at pin CANL (Note 2) −150 +150 V Vtran(VREF) Transient voltage at pin VREF (Note 2) −150 +150 V Vesd(CANL/CANH) Electrostatic discharge voltage at CANH and CANL pin (Note 3) (Note 6) −8 −500 +8 +500 kV V Vesd Electrostatic discharge voltage at all other pins (Note 4) (Note 6) −4 −250 + 4 +250 kV V Latch−up Static latch−up at all pins (Note 5) 100 mA Tstg Storage temperature −55 +155 °C Tamb Ambient temperature −40 +125 °C Tjunc Maximum junction temperature −40 +150 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 2. Applied transient waveforms in accordance with “ISO 7637 part 3”, test pulses 1, 2, 3a and 3b (see Figure 4). 3. Standardized human body model system ESD pulses in accordance to IEC 1000.4.2. 4. Standardized human body model ESD pulses in accordance to MIL883 method 3015. Supply pin 8 is ±4 kV. 5. Static latch−up immunity: static latch−up protection level when tested according to EIA/JESD78. 6. Standardized charged device model ESD pulses when tested according to EOS/ESD DS5.3−1993. Table 6. Thermal Characteristics Symbol Parameter Conditions Value Unit Rth(vj−a) Thermal resistance from junction to ambient in SO8 package In free air 145 K/W Rth(vj−s) Thermal resistance from junction to substrate of bare die In free air 45 K/W Table 7. DC Characteristics (VCC = 4.75 to 5.25 V; V33 = 2.9 V to 3.6 V; Tjunc = −40 to +150°C; RLT = 60 W unless specified otherwise.) Symbol Parameter Conditions Min. Typ. Max. Unit Supply (pin VCC and pin V33) ICC Supply current Dominant; VTXD = 0 V Recessive; VTXD = VCC 45 4 65 8 mA I33 I/O interface current V33 = 3.3 V; CL = 20 pF; recessive 1 mA I33 I/O interface current (Note 7) V33 = 3.3 V; CL = 20 pF; 1 Mbps 170 mA Transmitter Data Input (pin TxD) VIH HIGH−level input voltage Output recessive 2.0 − VCC V VIL LOW−level input voltage Output dominant −0.3 − +0.8 V IIH HIGH−level input current VTxD = V33 −1 0 +1 mA IIL LOW−level input current VTxD = 0 V −50 −200 −300 mA 7. Not tested on ATE. |
Nº de peça semelhante - AMIS-30663_14 |
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Descrição semelhante - AMIS-30663_14 |
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