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IRF120 Folha de dados(PDF) 1 Page - Inchange Semiconductor Company Limited

Nome de Peças IRF120
Descrição Electrónicos  Nanosecond Switching Speeds
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Fabricante Electrônico  ISC [Inchange Semiconductor Company Limited]
Página de início  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

IRF120 Folha de dados(HTML) 1 Page - Inchange Semiconductor Company Limited

  IRF120 Datasheet HTML 1Page - Inchange Semiconductor Company Limited IRF120 Datasheet HTML 2Page - Inchange Semiconductor Company Limited  
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INCHANGE Semiconductor
isc Product Specification
isc website:www.iscsemi.cn
isc & iscsemi is registered trademark
1
isc N-Channel MOSFET Transistor
IRF120
DESCRIPTION
·Drain Current ID=8A@ TC=25℃
·Drain Source Voltage-
: VDSS= 100V(Min)
·Static Drain-Source On-Resistance
: RDS(on) =0.3Ω(Max)
·Nanosecond Switching Speeds
APPLICATIONS
·Switching power supplies
·Motor controls,Inverters and Choppers
·Audio amplifiers and high energy pulse circuits.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage (VGS=0)
100
V
VGS
Gate-Source Voltage
±20
V
ID
Drain Current-continuous@ TC=25℃
8
A
Ptot
Total Dissipation@TC=25℃
40
W
Tj
Max. Operating Junction Temperature
150
Tstg
Storage Temperature Range
-55~150
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance,Junction to Case
3.12
℃/W
Rth j-a
Thermal Resistance,Junction to Ambient
30
℃/W
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