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IRF123 Folha de dados(PDF) 2 Page - Inchange Semiconductor Company Limited

Nome de Peças IRF123
Descrição Electrónicos  Nanosecond Switching Speeds
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Fabricante Electrônico  ISC [Inchange Semiconductor Company Limited]
Página de início  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

IRF123 Folha de dados(HTML) 2 Page - Inchange Semiconductor Company Limited

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INCHANGE Semiconductor
isc Product Specification
isc website:www.iscsemi.cn
isc & iscsemi is registered trademark
2
isc N-Channel MOSFET Transistor
IRF123
·ELECTRICAL CHARACTERISTICS (TC=25℃)
SYMBOL
PARAMETER
CONDITIONS
MIN
TYPE
MAX
UNIT
V(BR)DSS
Drain-Source Breakdown Voltage
VGS=0; ID=250µA
60
V
VGS(TH)
Gate Threshold Voltage
VDS= VGS; ID=250µA
2.0
4.0
V
RDS(ON)
Drain-Source On-stage Resistance
VGS=10V; ID=4A
0.4
Ω
IGSS
Gate Source Leakage Current
VGS=±20V;VDS=0
±100
nA
IDSS
Zero Gate Voltage Drain Current
VDS=60V; VGS=0
250
uA
VSD
Diode Forward Voltage
IS=7A; VGS=0
2.5
V
Ciss
Input Capacitance
VDS=25V;
VGS=0V;
fT=1MHz
450
600
pF
Crss
Reverse Transfer Capacitance
50
100
Coss
Output Capacitance
200
400
tr
Rise Time
RGS=50Ω
ID=4A;
VDD=50V;
RL=50Ω
35
70
ns
td(on)
Turn-on Delay Time
20
40
tf
Fall Time
35
70
td(off)
Turn-off Delay Time
50
100
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