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IRFP343R Folha de dados(PDF) 1 Page - Inchange Semiconductor Company Limited |
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IRFP343R Folha de dados(HTML) 1 Page - Inchange Semiconductor Company Limited |
1 / 2 page INCHANGE Semiconductor isc Product Specification isc website:www.iscsemi.cn isc & iscsemi is registered trademark 1 isc N-Channel MOSFET Transistor IRFP343R FEATURES ·Drain Current –I D= 8.7A@ TC=25℃ ·Drain Source Voltage- : VDSS= 350V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.80Ω(Max) ·Fast Switching DESCRIPTION ·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) THERMAL CHARACTERISTICS SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 350 V VGS Gate-Source Voltage-Continuous ±20 V ID Drain Current-Continuous 8.7 A IDM Drain Current-Single Pluse 35 A PD Total Dissipation @TC=25℃ 150 W TJ Max. Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 0.83 ℃/W Rth j-a Thermal Resistance, Junction to Ambient 30 ℃/W PDF pdfFactory Pro www.fineprint.cn |
Nº de peça semelhante - IRFP343R |
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Descrição semelhante - IRFP343R |
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