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CSD17381F4 Folha de dados(PDF) 1 Page - Texas Instruments

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Nome de Peças CSD17381F4
Descrição Electrónicos  30 V N-Channel FemtoFET MOSFET
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Fabricante Electrônico  TI1 [Texas Instruments]
Página de início  http://www.ti.com
Logo TI1 - Texas Instruments

CSD17381F4 Folha de dados(HTML) 1 Page - Texas Instruments

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CSD17381F4
SLPS411D – APRIL 2013 – REVISED OCTOBER 2014
CSD17381F4 30 V N-Channel FemtoFET™ MOSFET
1 Features
Product Summary
1
Ultra-Low On-Resistance
TA = 25°C
TYPICAL VALUE
UNIT
Ultra-Low Qg and Qgd
VDS
Drain-to-Source Voltage
30
V
Low Threshold Voltage
Qg
Gate Charge Total (4.5 V)
1040
pC
Qgd
Gate Charge Gate-to-Drain
133
pC
Ultra-Small Footprint (0402 Case Size)
VGS = 1.8 V
160
m
1.0 mm × 0.6 mm
RDS(on)
Drain-to-Source On-Resistance
VGS = 2.5 V
110
m
Ultra-Low Profile
VGS = 4.5 V
90
m
0.35 mm Height
VGS(th)
Threshold Voltage
0.85
V
Integrated ESD Protection Diode
Rated >4 kV HBM
.
Ordering Information(1)
Rated >2 kV CDM
Device
Qty
Media
Package
Ship
Lead and Halogen Free
CSD17381F4
3000
Femto (0402) 1.0 mm
7-Inch
Tape and
RoHS Compliant
×0.6 mm SMD Lead
Reel
Reel
CSD17381F4T
250
Less
2 Applications
(1) For all available packages, see the orderable addendum at
the end of the data sheet.
Optimized for Load Switch Applications
Optimized for General Purpose Switching
Absolute Maximum Ratings
Applications
TA = 25°C unless otherwise stated
VALUE
UNIT
Single-Cell Battery Applications
VDS
Drain-to-Source Voltage
30
V
VGS
Gate-to-Source Voltage
12
V
Handheld and Mobile Applications
ID
Continuous Drain Current, TA = 25°C
(1)
3.1
A
IDM
Pulsed Drain Current, TA = 25°C
(2)
10
A
3 Description
Continuous Gate Clamp Current
35
This 90 m
Ω, 30 V N-Channel FemtoFET™ MOSFET
IG
mA
Pulsed Gate Clamp Current(2)
350
technology is designed and optimized to minimize the
footprint in many handheld and mobile applications.
PD
Power Dissipation(1)
500
mW
This technology is capable of replacing standard
Human Body Model (HBM)
4
kV
ESD
small signal MOSFETs while providing at least a 60%
Rating Charged Device Model (CDM)
2
kV
reduction in footprint size.
TJ,
Operating Junction and
–55 to 150
°C
Tstg
Storage Temperature Range
.
Avalanche Energy, single pulse ID = 7.4 A,
EAS
2.7
mJ
L = 0.1 mH, RG = 25 Ω
Typical Part Dimensions
(1) Typical RθJA = 90°C/W on 1 inch
2
(6.45 cm2), 2 oz.
(0.071 mm thick) Cu pad on a 0.06 inch (1.52 mm) thick FR4
PCB.
(2) Pulse duration
≤300 μs, duty cycle ≤2%
Top View
.
.
.
.
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.


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