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CSD17556Q5BT Folha de dados(PDF) 5 Page - Texas Instruments

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Nome de Peças CSD17556Q5BT
Descrição Electrónicos  30 V N-Channel NexFET Power MOSFET
Download  13 Pages
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Fabricante Electrônico  TI1 [Texas Instruments]
Página de início  http://www.ti.com
Logo TI1 - Texas Instruments

CSD17556Q5BT Folha de dados(HTML) 5 Page - Texas Instruments

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VGS - Gate-to- Source Voltage (V)
TC = 25°C Id = 30A
TC = 125ºC Id = 30A
G001
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
2.2
−75
−25
25
75
125
175
TC - Case Temperature (ºC)
VGS = 4.5V
VGS = 10V
ID =30A
G001
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10000
100000
0
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30
VDS - Drain-to-Source Voltage (V)
Ciss = Cgd + Cgs
Coss = Cds + Cgd
Crss = Cgd
G001
0.6
0.8
1
1.2
1.4
1.6
1.8
2
−75
−25
25
75
125
175
TC - Case Temperature (ºC)
ID = 250uA
G001
0
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VGS - Gate-to-Source Voltage (V)
TC = 125°C
TC = 25°C
TC = −55°C
VDS = 5V
G001
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Qg - Gate Charge (nC)
ID = 30A
VDS =15V
G001
CSD17556Q5B
www.ti.com
SLPS392B – MARCH 2013 – REVISED OCTOBER 2014
Typical MOSFET Characteristics (continued)
(TA = 25°C unless otherwise stated)
Figure 3. Transfer Characteristics
Figure 4. Gate Charge
Figure 5. Capacitance
Figure 6. Threshold Voltage vs Temperature
Figure 7. On-State Resistance vs Gate-to-Source Voltage
Figure 8. Normalized On-State Resistance vs Temperature
Copyright © 2013–2014, Texas Instruments Incorporated
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